High characteristic temperature for ridge-waveguide laser with a highly stacked InAs quantum dot structure

Kouichi Akahane, Atsushi Matsumoto, Toshimasa Umezawa, Naokatsu Yamamoto, Tetsuya Kawanishi

    研究成果: Conference contribution

    3 被引用数 (Scopus)

    抄録

    A ridge-waveguide laser with highly stacked InAs quantum dot structure based on strain compensation technique was fabricated. The threshold current of this laser was decreased to approximately 75 mA without coating the facet mirror. A high characteristic temperature of over 100 K was obtained using this laser.

    本文言語English
    ホスト出版物のタイトル2016 International Semiconductor Laser Conference, ISLC 2016
    出版社Institute of Electrical and Electronics Engineers Inc.
    ISBN(電子版)9784885523069
    出版ステータスPublished - 2016 12 2
    イベント2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan
    継続期間: 2016 9 122016 9 15

    Other

    Other2016 International Semiconductor Laser Conference, ISLC 2016
    国/地域Japan
    CityKobe
    Period16/9/1216/9/15

    ASJC Scopus subject areas

    • 原子分子物理学および光学
    • 電子工学および電気工学

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