High characteristic temperature for ridge-waveguide laser with a highly stacked InAs quantum dot structure

Kouichi Akahane, Atsushi Matsumoto, Toshimasa Umezawa, Naokatsu Yamamoto, Tetsuya Kawanishi

    研究成果: Conference contribution

    2 引用 (Scopus)

    抄録

    A ridge-waveguide laser with highly stacked InAs quantum dot structure based on strain compensation technique was fabricated. The threshold current of this laser was decreased to approximately 75 mA without coating the facet mirror. A high characteristic temperature of over 100 K was obtained using this laser.

    元の言語English
    ホスト出版物のタイトル2016 International Semiconductor Laser Conference, ISLC 2016
    出版者Institute of Electrical and Electronics Engineers Inc.
    ISBN(電子版)9784885523069
    出版物ステータスPublished - 2016 12 2
    イベント2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan
    継続期間: 2016 9 122016 9 15

    Other

    Other2016 International Semiconductor Laser Conference, ISLC 2016
    Japan
    Kobe
    期間16/9/1216/9/15

    Fingerprint

    Ridge waveguides
    waveguide lasers
    Semiconductor quantum dots
    ridges
    quantum dots
    Lasers
    threshold currents
    lasers
    flat surfaces
    mirrors
    coatings
    Temperature
    temperature
    Mirrors
    Coatings

    ASJC Scopus subject areas

    • Atomic and Molecular Physics, and Optics
    • Electrical and Electronic Engineering

    これを引用

    Akahane, K., Matsumoto, A., Umezawa, T., Yamamoto, N., & Kawanishi, T. (2016). High characteristic temperature for ridge-waveguide laser with a highly stacked InAs quantum dot structure. : 2016 International Semiconductor Laser Conference, ISLC 2016 [7765802] Institute of Electrical and Electronics Engineers Inc..

    High characteristic temperature for ridge-waveguide laser with a highly stacked InAs quantum dot structure. / Akahane, Kouichi; Matsumoto, Atsushi; Umezawa, Toshimasa; Yamamoto, Naokatsu; Kawanishi, Tetsuya.

    2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7765802.

    研究成果: Conference contribution

    Akahane, K, Matsumoto, A, Umezawa, T, Yamamoto, N & Kawanishi, T 2016, High characteristic temperature for ridge-waveguide laser with a highly stacked InAs quantum dot structure. : 2016 International Semiconductor Laser Conference, ISLC 2016., 7765802, Institute of Electrical and Electronics Engineers Inc., 2016 International Semiconductor Laser Conference, ISLC 2016, Kobe, Japan, 16/9/12.
    Akahane K, Matsumoto A, Umezawa T, Yamamoto N, Kawanishi T. High characteristic temperature for ridge-waveguide laser with a highly stacked InAs quantum dot structure. : 2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7765802
    Akahane, Kouichi ; Matsumoto, Atsushi ; Umezawa, Toshimasa ; Yamamoto, Naokatsu ; Kawanishi, Tetsuya. / High characteristic temperature for ridge-waveguide laser with a highly stacked InAs quantum dot structure. 2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc., 2016.
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    abstract = "A ridge-waveguide laser with highly stacked InAs quantum dot structure based on strain compensation technique was fabricated. The threshold current of this laser was decreased to approximately 75 mA without coating the facet mirror. A high characteristic temperature of over 100 K was obtained using this laser.",
    keywords = "characteristic temperature, quantum dot, ridge-waveguide laser, strain-compensation",
    author = "Kouichi Akahane and Atsushi Matsumoto and Toshimasa Umezawa and Naokatsu Yamamoto and Tetsuya Kawanishi",
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    AU - Akahane, Kouichi

    AU - Matsumoto, Atsushi

    AU - Umezawa, Toshimasa

    AU - Yamamoto, Naokatsu

    AU - Kawanishi, Tetsuya

    PY - 2016/12/2

    Y1 - 2016/12/2

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    KW - characteristic temperature

    KW - quantum dot

    KW - ridge-waveguide laser

    KW - strain-compensation

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