High characteristic temperature of highly stacked quantum-dot laser for 1.55-μm band

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi

研究成果: Article査読

56 被引用数 (Scopus)

抄録

We fabricated broad-area laser diodes comprising 30-layer stacks of InAs quantum dots (QDs) by using strain compensation. The devices exhibited ground-state lasing at 1529 nm in pulsed mode with a high characteristic temperature of 113 K around room temperature (20 °C-80 °C). Ground-state lasing was achieved because of the high QD density afforded by strain compensation.

本文言語English
ページ(範囲)103-105
ページ数3
ジャーナルIEEE Photonics Technology Letters
22
2
DOI
出版ステータスPublished - 2010 1 15
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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