High common-emitter current gains obtained by pnp GaN bipolar junction transistors

Kazuhide Kumakura*, Toshiki Makimoto, Naoki Kobayashi

*この研究の対応する著者

研究成果: Conference article査読

抄録

We fabricated pnp GaN bipolar junction transistors and investigated their common-emitter and common-base current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its electron concentration was estimated to be 3 × 1017 cm-3 from the common-emitter current-voltage characteristics and the base conductivity. The common-emitter current-voltage characteristics showed very low leak current. The maximum current gains at room temperature were 50 and 69 from the common-emitter and the common-base current-voltage characteristics, respectively.

本文言語English
ページ(範囲)793-798
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
693
出版ステータスPublished - 2002 1月 1
外部発表はい
イベントGaN and Related Alloys-2001 - Boston, MA, United States
継続期間: 2001 11月 262001 11月 30

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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