High critical electric field of AlxGa1-xN p-i-n vertical conducting diodes on n-SiC substrates

Atsushi Nishikawa, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto

研究成果: Article

20 引用 (Scopus)

抄録

We report the current-voltage characteristics of AlxGa 1-xN (x=0-0.22) p-i-n vertical conducting diodes grown on n-SiC substrates by low-pressure metal organic vapor phase epitaxy. An increase in the breakdown voltage was experimentally demonstrated with increasing Al composition. The corresponding critical electric fields were calculated to be 2.4 MVcm for GaN and 3.5 MVcm for Al0.22 Ga0.78 N. The critical electric field is proportional to the band gap energy to a power of 2.5. The forward voltage drop also increases with increasing Al composition but it is still as low as 5.2 V even in the case of the Al0.22 Ga0.78 N p-i-n diode.

元の言語English
記事番号173508
ジャーナルApplied Physics Letters
88
発行部数17
DOI
出版物ステータスPublished - 2006
外部発表Yes

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diodes
conduction
p-i-n diodes
electric fields
electric potential
electrical faults
vapor phase epitaxy
low pressure
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

High critical electric field of AlxGa1-xN p-i-n vertical conducting diodes on n-SiC substrates. / Nishikawa, Atsushi; Kumakura, Kazuhide; Akasaka, Tetsuya; Makimoto, Toshiki.

:: Applied Physics Letters, 巻 88, 番号 17, 173508, 2006.

研究成果: Article

Nishikawa, Atsushi ; Kumakura, Kazuhide ; Akasaka, Tetsuya ; Makimoto, Toshiki. / High critical electric field of AlxGa1-xN p-i-n vertical conducting diodes on n-SiC substrates. :: Applied Physics Letters. 2006 ; 巻 88, 番号 17.
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