High critical electric field of AlxGa1-xN p-i-n vertical conducting diodes on n-SiC substrates

Atsushi Nishikawa, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto

研究成果: Article査読

23 被引用数 (Scopus)

抄録

We report the current-voltage characteristics of AlxGa 1-xN (x=0-0.22) p-i-n vertical conducting diodes grown on n-SiC substrates by low-pressure metal organic vapor phase epitaxy. An increase in the breakdown voltage was experimentally demonstrated with increasing Al composition. The corresponding critical electric fields were calculated to be 2.4 MVcm for GaN and 3.5 MVcm for Al0.22 Ga0.78 N. The critical electric field is proportional to the band gap energy to a power of 2.5. The forward voltage drop also increases with increasing Al composition but it is still as low as 5.2 V even in the case of the Al0.22 Ga0.78 N p-i-n diode.

本文言語English
論文番号173508
ジャーナルApplied Physics Letters
88
17
DOI
出版ステータスPublished - 2006 5 15
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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