High current gain (>2000) and reduced common-emitter offset voltage of GaN/InGaN double heterojunction bipolar transistors

Toshiki Makimoto; K. Kumakura; N. Kobayashi

doi:10.1109/DRC.2003.1226854

High current gain (>2000) and reduced common-emitter offset voltage of GaN/InGaN double heterojunction bipolar transistors

Toshiki Makimoto, K. Kumakura, N. Kobayashi

研究成果: Conference contribution

抄録

In this paper, we report on the significantly improved common-emitter I-V characteristics of GaN/InGaN DHBT with this regrown p-InGaN base layer.

本文言語	English
ホスト出版物のタイトル	Device Research Conference - Conference Digest, DRC
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	23-24
ページ数	2
巻	2003-January
ISBN（印刷版）	0780377273
DOI	https://doi.org/10.1109/DRC.2003.1226854
出版ステータス	Published - 2003
外部発表	はい
イベント	61st Device Research Conference, DRC 2003 - Salt Lake City, United States 継続期間: 2003 6月 23 → 2003 6月 25

Other

Other	61st Device Research Conference, DRC 2003
国/地域	United States
City	Salt Lake City
Period	03/6/23 → 03/6/25

ASJC Scopus subject areas

電子工学および電気工学

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10.1109/DRC.2003.1226854

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引用スタイル

Makimoto, T, Kumakura, K & Kobayashi, N 2003, High current gain (>2000) and reduced common-emitter offset voltage of GaN/InGaN double heterojunction bipolar transistors. in Device Research Conference - Conference Digest, DRC. vol. 2003-January, 1226854, Institute of Electrical and Electronics Engineers Inc., pp. 23-24, 61st Device Research Conference, DRC 2003, Salt Lake City, United States, 03/6/23. https://doi.org/10.1109/DRC.2003.1226854

@inproceedings{8e6c519870f84997b51e2e3278b9054f,

title = "High current gain (>2000) and reduced common-emitter offset voltage of GaN/InGaN double heterojunction bipolar transistors",

abstract = "In this paper, we report on the significantly improved common-emitter I-V characteristics of GaN/InGaN DHBT with this regrown p-InGaN base layer.",

keywords = "Aluminum gallium nitride, Diodes, Double heterojunction bipolar transistors, Epitaxial growth, Epitaxial layers, Gallium nitride, Heterojunction bipolar transistors, Laboratories, Low voltage, Temperature",

author = "Toshiki Makimoto and K. Kumakura and N. Kobayashi",

year = "2003",

doi = "10.1109/DRC.2003.1226854",

language = "English",

isbn = "0780377273",

volume = "2003-January",

pages = "23--24",

booktitle = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "61st Device Research Conference, DRC 2003 ; Conference date: 23-06-2003 Through 25-06-2003",

}

TY - GEN

T1 - High current gain (>2000) and reduced common-emitter offset voltage of GaN/InGaN double heterojunction bipolar transistors

AU - Makimoto, Toshiki

AU - Kumakura, K.

AU - Kobayashi, N.

PY - 2003

Y1 - 2003

N2 - In this paper, we report on the significantly improved common-emitter I-V characteristics of GaN/InGaN DHBT with this regrown p-InGaN base layer.

AB - In this paper, we report on the significantly improved common-emitter I-V characteristics of GaN/InGaN DHBT with this regrown p-InGaN base layer.

KW - Aluminum gallium nitride

KW - Diodes

KW - Double heterojunction bipolar transistors

KW - Epitaxial growth

KW - Epitaxial layers

KW - Gallium nitride

KW - Heterojunction bipolar transistors

KW - Laboratories

KW - Low voltage

KW - Temperature

UR - http://www.scopus.com/inward/record.url?scp=84942608550&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84942608550&partnerID=8YFLogxK

U2 - 10.1109/DRC.2003.1226854

DO - 10.1109/DRC.2003.1226854

M3 - Conference contribution

AN - SCOPUS:84942608550

SN - 0780377273

VL - 2003-January

SP - 23

EP - 24

BT - Device Research Conference - Conference Digest, DRC

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 61st Device Research Conference, DRC 2003

Y2 - 23 June 2003 through 25 June 2003

ER -

High current gain (>2000) and reduced common-emitter offset voltage of GaN/InGaN double heterojunction bipolar transistors

抄録

Other

ASJC Scopus subject areas

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