High Current Gains Obtained by InGaN/GaN Double Heterojunction Bipolar Transistors

Toshiki Makimoto, K. Kumakura, N. Kobayashi

研究成果: Article

14 引用 (Scopus)

抄録

InGaN/GaN double heterojunction bipolar Npn transistors have been fabricated using p-type InGaN and n-type GaN as base and collector layers, respectively. The structures were grown on SiC substrates by low-pressure metalorganic vapor phase epitaxy. The In mole fraction in the base layer and its thickness were 0.06 and 100 nm, respectively. The Mg doping concentration in the base layer was 1 × 1019 cm-3 corresponding to a hole concentration of 5 × 1018 cm-3 at room temperature. The common-emitter I-V characteristics showed good saturation characteristics and a maximum current gain of 20 was obtained at room temperature.

元の言語English
ページ(範囲)183-186
ページ数4
ジャーナルPhysica Status Solidi (A) Applied Research
188
発行部数1
DOI
出版物ステータスPublished - 2001 11
外部発表Yes

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Heterojunction bipolar transistors
bipolar transistors
high current
heterojunctions
Hole concentration
Metallorganic vapor phase epitaxy
Doping (additives)
room temperature
vapor phase epitaxy
accumulators
Temperature
emitters
Substrates
low pressure
saturation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

これを引用

High Current Gains Obtained by InGaN/GaN Double Heterojunction Bipolar Transistors. / Makimoto, Toshiki; Kumakura, K.; Kobayashi, N.

:: Physica Status Solidi (A) Applied Research, 巻 188, 番号 1, 11.2001, p. 183-186.

研究成果: Article

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