High-density and low-power nonvolatile static random access memory using spin-transfer-torque magnetic tunnel junction

Takashi Ohsawa, Fumitaka Iga, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

研究成果: Article査読

25 被引用数 (Scopus)

抄録

A novel nonvolatile static random access memory cell is proposed that consists of four transistors and two spin-transfer-torque magnetic tunnel junctions (STT-MTJs). In the case of the NFET driver cell, the free layers of the magnetic tunnel junctions are connected to the transistors' sources and drains to make the cell read-disturb free. The static power is totally eliminated as the power line is shut down during data hold. The static noise margin of the cell is calculated based on the experimental data on MTJ switching that is enhanced from the resistive load SRAM cell due to the MTJ's switching operation. The cell size is estimated to become smaller than the 6-transistor SRAM cell when it is designed at 45nm node and beyond owing to the MTJ's area shrink as well as the thinning of its tunnel dielectrics (MgO).

本文言語English
論文番号02BD01
ジャーナルJapanese journal of applied physics
51
2 PART 2
DOI
出版ステータスPublished - 2012 2 1
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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