High dynamic range variable gain amplifier using 130 nm CMOS technology for triple-band W-CDMA applications

Yong Ju Suh*, Shohei Ishikawa, Hiroshi Ohta, Ryuichi Fujimoto, Nobuyuki Itoh, Toshihiko Yoshimasu

*この研究の対応する著者

研究成果: Conference contribution

抄録

This paper presents a high dynamic range variable gain amplifier (VGA) using 130 nm CMOS technology for the triple-band W-CDMA applications. The VGA includes an active balun, a two-stage amplifier, two SPDT switches, and a V-I converter which converts a dc control voltage to the dc current for controlling the gain of the each amplifier. The operation voltage is 2.5 V. The dynamic range is over 100 dB at 800 MHz-band and 84 dB at 2 GHz-band. To realize high dynamic range with the two-stage amplifier, a novel exponential approximation function for V-I converter is proposed. The maximum output power at 800 MHz is 7 dBm with a gain of 27 dB. At this rated output power, the adjacent channel power rejection (ACPR) in +/-5 MHz offset frequency bands are -43 dBc which is highly linear performance.

本文言語English
ホスト出版物のタイトル2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT
ページ139-142
ページ数4
DOI
出版ステータスPublished - 2008 9月 11
イベント2008 International Conference on Microwave and Millimeter Wave Technology, ICMMT - Nanjing, China
継続期間: 2008 4月 212008 4月 24

出版物シリーズ

名前2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT
1

Conference

Conference2008 International Conference on Microwave and Millimeter Wave Technology, ICMMT
国/地域China
CityNanjing
Period08/4/2108/4/24

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 通信

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