High efficiency edge-illuminated uni-travelling-carrier-structure refracting-facet photodiode

H. Fukano, Y. Muramoto, K. Takahata, Y. Matsuoka

研究成果: Article

38 引用 (Scopus)

抜粋

A high-efficiency uni-travelling carrier (UTC) photodiode was developed using an edge-illuminated refracting-facet photodiode (RFPD) structure. The fabricated UTC-RFPD exhibited a maximum responsivity as high as 0.48 A/W even with a 280-nm-thin absorption layer, and a high output peak-to-peak voltage of 1.5 V at 40 Gbit/s.

元の言語English
ページ(範囲)1664-1665
ページ数2
ジャーナルElectronics Letters
35
発行部数19
DOI
出版物ステータスPublished - 1999 9 16

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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