High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier

T. Umezawa, K. Katshima, A. Kanno, K. Akahane, A. Matsumoto, N. Yamamoto, Tetsuya Kawanishi

    研究成果: Conference contribution

    1 引用 (Scopus)

    抄録

    A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.

    元の言語English
    ホスト出版物のタイトルTerahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX
    出版者SPIE
    9747
    ISBN(電子版)9781628419825
    DOI
    出版物ステータスPublished - 2016
    イベントTerahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX - San Francisco, United States
    継続期間: 2016 2 152016 2 18

    Other

    OtherTerahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX
    United States
    San Francisco
    期間16/2/1516/2/18

    Fingerprint

    transistor amplifiers
    Photodiode
    High electron mobility transistors
    Photodiodes
    high electron mobility transistors
    Power Consumption
    photodiodes
    High Efficiency
    Electric power utilization
    modules
    Electron
    Module
    Coplanar
    Connector
    Coplanar waveguides
    connectors
    Coaxial
    Gallium Arsenide
    Frequency Response
    Insertion losses

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Computer Science Applications
    • Applied Mathematics
    • Electrical and Electronic Engineering

    これを引用

    Umezawa, T., Katshima, K., Kanno, A., Akahane, K., Matsumoto, A., Yamamoto, N., & Kawanishi, T. (2016). High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier. : Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX (巻 9747). [97470D] SPIE. https://doi.org/10.1117/12.2209735

    High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier. / Umezawa, T.; Katshima, K.; Kanno, A.; Akahane, K.; Matsumoto, A.; Yamamoto, N.; Kawanishi, Tetsuya.

    Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX. 巻 9747 SPIE, 2016. 97470D.

    研究成果: Conference contribution

    Umezawa, T, Katshima, K, Kanno, A, Akahane, K, Matsumoto, A, Yamamoto, N & Kawanishi, T 2016, High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier. : Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX. 巻. 9747, 97470D, SPIE, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX, San Francisco, United States, 16/2/15. https://doi.org/10.1117/12.2209735
    Umezawa T, Katshima K, Kanno A, Akahane K, Matsumoto A, Yamamoto N その他. High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier. : Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX. 巻 9747. SPIE. 2016. 97470D https://doi.org/10.1117/12.2209735
    Umezawa, T. ; Katshima, K. ; Kanno, A. ; Akahane, K. ; Matsumoto, A. ; Yamamoto, N. ; Kawanishi, Tetsuya. / High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier. Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX. 巻 9747 SPIE, 2016.
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    abstract = "A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.",
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    AU - Umezawa, T.

    AU - Katshima, K.

    AU - Kanno, A.

    AU - Akahane, K.

    AU - Matsumoto, A.

    AU - Yamamoto, N.

    AU - Kawanishi, Tetsuya

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    N2 - A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.

    AB - A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.

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