High electromechanical coefficient kt 2=19% thick ScAlN piezoelectric films for ultrasonic transducer in low frequency of 80 MHz

Ko Hei Sano, Rei Karasawa, Takahiko Yanagitani

    研究成果: Conference contribution

    4 引用 (Scopus)

    抜粋

    Ultrasonic transducers in the frequency ranges of 20-100 MHz is not well-developed because of less applications or less suitable piezoelectric materials. PVDF are usually used for ultrasonic transducers in the 10-50 MHz ranges. However, their electromechanical coupling coefficient kt 2 of 4% is not enough for the practical uses. In order to excite ultrasonic in the 20-100 MHz, 125 μm-25 μm thick piezoelectric film is required. It is difficult to grow such a thick piezoelectric film without a crack caused by the internal stress during the PVD deposition technique. We achieved stress free film growth by employing the unique hot cathode sputtering technique without heating substrate. We demonstrated high efficient 81 MHz (kt 2=18.5%) and 43 MHz (kt 2=11.9%) ultrasonic generation by using the 43 μm and 90 μm extremely thick ScAlN(Sc:39%) films, respectively.

    元の言語English
    ホスト出版物のタイトル2017 IEEE International Ultrasonics Symposium, IUS 2017
    出版者IEEE Computer Society
    ISBN(電子版)9781538633830
    DOI
    出版物ステータスPublished - 2017 10 31
    イベント2017 IEEE International Ultrasonics Symposium, IUS 2017 - Washington, United States
    継続期間: 2017 9 62017 9 9

    Other

    Other2017 IEEE International Ultrasonics Symposium, IUS 2017
    United States
    Washington
    期間17/9/617/9/9

      フィンガープリント

    ASJC Scopus subject areas

    • Acoustics and Ultrasonics

    これを引用

    Sano, K. H., Karasawa, R., & Yanagitani, T. (2017). High electromechanical coefficient kt 2=19% thick ScAlN piezoelectric films for ultrasonic transducer in low frequency of 80 MHz. : 2017 IEEE International Ultrasonics Symposium, IUS 2017 [8092005] IEEE Computer Society. https://doi.org/10.1109/ULTSYM.2017.8092005