High-energy implantation of Hg+ ions into GaAs grown by liquid encapsulated Czochralski method: formation of multiple shallow emissions

Kentaro Harada*, Bassirou Lo, Yunosuke Makita, Aboubaker C. Beye, Matthew P. Halsall, Shinji Kimura, Naoto Kobayashi, Tsutomu Iida, Takayuki Shima, Hajime Shibata, Akira Obara, Tokue Matsumori

*この研究の対応する著者

研究成果査読

2 被引用数 (Scopus)

抄録

The incorporation of Hg atoms was carried out into liquid-encapsulated Czochralski GaAs by high-energy ion implantation. Hall effects measurements at room temperature and 2 K photoluminescence spectra revealed that rapid thermal annealing method is superior to furnace annealing method in view of electrical and optical activation. Activation rate of Hg acceptors as high as 30% was obtained. Optically activated Hg acceptor was found to produce at least six Hg-related shallow emissions in the vicinity of band edge. In addition to the conduction band to Hg acceptor transition, associated with moderately deep acceptor binding energy (52 meV) of Hg, the Hg majority acceptor is found to produce a neutral acceptor complex defect. Moreover, two relatively broad emissions, [g-g] and [g-g]α were noticeably observed which indicated apparent red- and blue-energy shift with increasing net hole concentration |NA - ND|, respectively.

本文言語English
ページ(範囲)2845-2847
ページ数3
ジャーナルApplied Physics Letters
67
19
DOI
出版ステータスPublished - 1995 11 6
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「High-energy implantation of Hg<sup>+</sup> ions into GaAs grown by liquid encapsulated Czochralski method: formation of multiple shallow emissions」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル