High-energy ion-implantation of a moderately deep acceptor Hg into liquid encapsulated Czochralski grown GaAs: formation of new shallow emission bands

K. Harada, Y. Makita, H. Shibata, B. Lo, A. C. Beye, M. P. Halsall, S. Kimura, Naoto Kobayashi, T. Iida, T. Shima, A. Obara

研究成果: Conference contribution

抄録

Hg (mercury) in GaAs is known to be a moderately deep acceptor impurity, having a 52 meV activation energy. Optical properties of Hg acceptors in GaAs were systematically investigated as a function of Hg concentration, [Hg]. Samples were prepared by high-energy ion-implantation of Hg + into GaAs grown by the liquid encapsulated Czochralski (LEC) method. Heat treatment was made by furnace annealing and rapid thermal annealing. Photoluminescence measurements at 2K revealed that the Hg-related so-called 'g' line is formed in addition to the well-defined conduction band-to-Hg acceptor transition, (e, Hg). Additionally, three shallow emissions are formed for net hole concentrations |N A-N D| greater than 2×10 17 cm -3. This is the first demonstration that even Hg in GaAs makes multiple shallow emissions due to acceptor-acceptor pairs and LEC GaAs can be used for the investigations of these emissions.

本文言語English
ホスト出版物のタイトルMaterials Research Society Symposium - Proceedings
出版社Materials Research Society
ページ835-840
ページ数6
396
出版ステータスPublished - 1996
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料

フィンガープリント

「High-energy ion-implantation of a moderately deep acceptor Hg into liquid encapsulated Czochralski grown GaAs: formation of new shallow emission bands」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル