Hg (mercury) in GaAs is known to be a moderately deep acceptor impurity, having a 52 meV activation energy. Optical properties of Hg acceptors in GaAs were systematically investigated as a function of Hg concentration, [Hg]. Samples were prepared by high-energy ion-implantation of Hg + into GaAs grown by the liquid encapsulated Czochralski (LEC) method. Heat treatment was made by furnace annealing and rapid thermal annealing. Photoluminescence measurements at 2K revealed that the Hg-related so-called 'g' line is formed in addition to the well-defined conduction band-to-Hg acceptor transition, (e, Hg). Additionally, three shallow emissions are formed for net hole concentrations |N A-N D| greater than 2×10 17 cm -3. This is the first demonstration that even Hg in GaAs makes multiple shallow emissions due to acceptor-acceptor pairs and LEC GaAs can be used for the investigations of these emissions.
|ホスト出版物のタイトル||Materials Research Society Symposium - Proceedings|
|出版社||Materials Research Society|
|出版ステータス||Published - 1996|
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