High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor Ga1-x Mnx N

J. I. Hwang, Y. Ishida, M. Kobayashi, H. Hirata, K. Takubo, T. Mizokawa, A. Fujimori, J. Okamoto, K. Mamiya, Y. Saito, Y. Muramatsu, H. Ott, A. Tanaka, T. Kondo, H. Munekata

研究成果: Article

58 被引用数 (Scopus)

抄録

We have studied the electronic structure of the diluted magnetic semiconductor Ga1-x Mnx N (x=0.0, 0.02, and 0.042) grown on Sn-doped n -type GaN using photoemission and soft x-ray absorption spectroscopy. Mn L -edge x-ray absorption have indicated that the Mn ions are in the tetrahedral crystal field and that their valence is divalent. Upon Mn doping into GaN, new states were found to form within the band gap of GaN, and the Fermi level was shifted downward. Satellite structures in the Mn 2p core level and the Mn 3d partial density of states were analyzed using configuration-interaction calculation on a Mn N4 cluster model. The deduced electronic structure parameters reveal that the p-d exchange coupling in Ga1-x Mnx N is stronger than that in Ga1-x Mnx As.

本文言語English
論文番号085216
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
72
8
DOI
出版ステータスPublished - 2005 8 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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