High-Extinction-Ratio MQW Electroabsorption-Modulator Integrated DFB Laser Fabricated by In-Plane Bandgap Energy Control Technique

M. Aoki, M. Takahashi, M. Suzuki, H. Sano, K. Uomi, T. Kawano, A. Takai

研究成果: Article

42 引用 (Scopus)

抜粋

local bandgap energy of an InGaAs/InGaAsP MQW structure was precisely adjusted by in-plane Eg control in one-step selective area MOCVD growth. The technique was then applied to an MQW electroabsorption modulator integrated DFB laser. Experimental results showed superior device characteristics, such as a high extinction ratio of 25 dB and low threshold current of 15 mA.

元の言語English
ページ(範囲)580-582
ページ数3
ジャーナルIEEE Photonics Technology Letters
4
発行部数6
DOI
出版物ステータスPublished - 1992 6
外部発表Yes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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