High frequency application of high transconductance surface-channel diamond field-effect transistors

H. Umezawa; H. Taniuchi; T. Arima; H. Ishizaka; N. Fujihara; Yoshikazu; Ohba; M. Tachiki; H. Kawarada

High frequency application of high transconductance surface-channel diamond field-effect transistors

H. Umezawa^*, H. Taniuchi, T. Arima, H. Ishizaka, N. Fujihara, Yoshikazu, Ohba, M. Tachiki, H. Kawarada

^*この研究の対応する著者

基幹理工学部

研究成果: Paper › 査読

3 被引用数 (Scopus)

抄録

High frequency operations of diamond field-effect transistors (FETs) on the hydrogen-terminated surface channel are realized for the first time. The cut-off frequency (f_T) and maximum oscillation frequency (f_max) of surface-channel diamond metal-semiconductor (MES) FET will, 2 μm gate length are 2.2 and 7 GHz respectively. Due to the effect of gate insulator insertion, the source-gate capacitance (C_GS) of surface-channel diamond (MIS) FET is reduced as half as that of diamond MESFETs. The 1 μm gate MISFET shows higher f_T of 4.8 GHz and f_max of 11 GHz in spite of comparatively low transconductance. The f_T of more than 20 GHz is expected at 0.5μm gate MISFET, because transconductance of 90 mS/mm diamond MISFET with 1 μm gate length has been already demonstrated.

本文言語	English
ページ	195-198
ページ数	4
出版ステータス	Published - 2001 1月 1
イベント	13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) - Osaka, Japan 継続期間: 2001 6月 4 → 2001 6月 7

Conference

Conference	13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01)
国/地域	Japan
City	Osaka
Period	01/6/4 → 01/6/7

ASJC Scopus subject areas

電子工学および電気工学

他のファイルとリンク

引用スタイル

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title = "High frequency application of high transconductance surface-channel diamond field-effect transistors",

abstract = "High frequency operations of diamond field-effect transistors (FETs) on the hydrogen-terminated surface channel are realized for the first time. The cut-off frequency (fT) and maximum oscillation frequency (fmax) of surface-channel diamond metal-semiconductor (MES) FET will, 2 μm gate length are 2.2 and 7 GHz respectively. Due to the effect of gate insulator insertion, the source-gate capacitance (CGS) of surface-channel diamond (MIS) FET is reduced as half as that of diamond MESFETs. The 1 μm gate MISFET shows higher fT of 4.8 GHz and fmax of 11 GHz in spite of comparatively low transconductance. The fT of more than 20 GHz is expected at 0.5μm gate MISFET, because transconductance of 90 mS/mm diamond MISFET with 1 μm gate length has been already demonstrated.",

author = "H. Umezawa and H. Taniuchi and T. Arima and H. Ishizaka and N. Fujihara and Yoshikazu and Ohba and M. Tachiki and H. Kawarada",

year = "2001",

month = jan,

day = "1",

language = "English",

pages = "195--198",

note = "13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) ; Conference date: 04-06-2001 Through 07-06-2001",

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T1 - High frequency application of high transconductance surface-channel diamond field-effect transistors

AU - Umezawa, H.

AU - Taniuchi, H.

AU - Arima, T.

AU - Ishizaka, H.

AU - Fujihara, N.

AU - Yoshikazu,

AU - Ohba,

AU - Tachiki, M.

AU - Kawarada, H.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - High frequency operations of diamond field-effect transistors (FETs) on the hydrogen-terminated surface channel are realized for the first time. The cut-off frequency (fT) and maximum oscillation frequency (fmax) of surface-channel diamond metal-semiconductor (MES) FET will, 2 μm gate length are 2.2 and 7 GHz respectively. Due to the effect of gate insulator insertion, the source-gate capacitance (CGS) of surface-channel diamond (MIS) FET is reduced as half as that of diamond MESFETs. The 1 μm gate MISFET shows higher fT of 4.8 GHz and fmax of 11 GHz in spite of comparatively low transconductance. The fT of more than 20 GHz is expected at 0.5μm gate MISFET, because transconductance of 90 mS/mm diamond MISFET with 1 μm gate length has been already demonstrated.

AB - High frequency operations of diamond field-effect transistors (FETs) on the hydrogen-terminated surface channel are realized for the first time. The cut-off frequency (fT) and maximum oscillation frequency (fmax) of surface-channel diamond metal-semiconductor (MES) FET will, 2 μm gate length are 2.2 and 7 GHz respectively. Due to the effect of gate insulator insertion, the source-gate capacitance (CGS) of surface-channel diamond (MIS) FET is reduced as half as that of diamond MESFETs. The 1 μm gate MISFET shows higher fT of 4.8 GHz and fmax of 11 GHz in spite of comparatively low transconductance. The fT of more than 20 GHz is expected at 0.5μm gate MISFET, because transconductance of 90 mS/mm diamond MISFET with 1 μm gate length has been already demonstrated.

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EP - 198

T2 - 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01)

Y2 - 4 June 2001 through 7 June 2001

ER -

High frequency application of high transconductance surface-channel diamond field-effect transistors

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Conference

ASJC Scopus subject areas

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