High frequency application of high transconductance surface-channel diamond field-effect transistors

H. Umezawa*, H. Taniuchi, T. Arima, H. Ishizaka, N. Fujihara, Yoshikazu, Ohba, M. Tachiki, H. Kawarada

*この研究の対応する著者

研究成果: Paper査読

3 被引用数 (Scopus)

抄録

High frequency operations of diamond field-effect transistors (FETs) on the hydrogen-terminated surface channel are realized for the first time. The cut-off frequency (fT) and maximum oscillation frequency (fmax) of surface-channel diamond metal-semiconductor (MES) FET will, 2 μm gate length are 2.2 and 7 GHz respectively. Due to the effect of gate insulator insertion, the source-gate capacitance (CGS) of surface-channel diamond (MIS) FET is reduced as half as that of diamond MESFETs. The 1 μm gate MISFET shows higher fT of 4.8 GHz and fmax of 11 GHz in spite of comparatively low transconductance. The fT of more than 20 GHz is expected at 0.5μm gate MISFET, because transconductance of 90 mS/mm diamond MISFET with 1 μm gate length has been already demonstrated.

本文言語English
ページ195-198
ページ数4
出版ステータスPublished - 2001 1月 1
イベント13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) - Osaka, Japan
継続期間: 2001 6月 42001 6月 7

Conference

Conference13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01)
国/地域Japan
CityOsaka
Period01/6/401/6/7

ASJC Scopus subject areas

  • 電子工学および電気工学

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