High-frequency Hall coefficient for the two-dimensional Hubbard model

F. F. Assaad*, M. Imada

*この研究の対応する著者

研究成果査読

抄録

We numerically calculate the high-frequency Hall coefficient, RH, for the 2D Hubbard model at small hole-doping near half-filling. In the weak-coupling regime RH is electron-like and comparable to its U/t = 0 value. In the strong-coupling regime, where the mapping onto the t-J model is justified, RH is electron-like with small amplitude in the temperature regimes T > U, T < J, and hole-like in the temperature regime J < T < U. Our conclusions are consistent with the picture of a Mott transition driven by the divergence of the effective mass as opposed to the vanishing of the number of charge carriers. This conclusion is valid in the strong- and weak-coupling regimes.

本文言語English
ページ(範囲)78-81
ページ数4
ジャーナルPhysica C: Superconductivity and its applications
263
1-4
DOI
出版ステータスPublished - 1996 5
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • エネルギー工学および電力技術
  • 電子工学および電気工学

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