High-frequency performance of diamond field-effect transistor

Hirotada Taniuchi, Hitoshi Umezawa, Takuya Arima, Minoru Tachiki, Hiroshi Kawarada

    研究成果: Article

    76 引用 (Scopus)

    抄録

    The microwave performance of a diamond metal-semiconductor field-effect transistor (MESFET) is reported for the first time. MESFETs with a gate length of 2-3 μm and a source-gate spacing of 0.1 μm were fabricated on the hydrogen-terminated surface of an undoped diamond film grown by microwave plasma chemical vapor deposition (CVD) utilizing a self-aligned gate fabrication process. A maximum transconductance of 70 mS/mm was obtained on a 2 μm gate MESFET at VGS = -1.5 V and VDS = -5 V, for which a cutoff frequency fT and a maximum oscillating frequency fmax of 2.2 GHz and 7 GHz were obtained, respectively.

    元の言語English
    ページ(範囲)390-392
    ページ数3
    ジャーナルIEEE Electron Device Letters
    22
    発行部数8
    DOI
    出版物ステータスPublished - 2001 8

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    MESFET devices
    Diamond
    Field effect transistors
    Diamonds
    Microwaves
    Diamond films
    Cutoff frequency
    Transconductance
    Hydrogen
    Chemical vapor deposition
    Plasmas
    Fabrication

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    これを引用

    High-frequency performance of diamond field-effect transistor. / Taniuchi, Hirotada; Umezawa, Hitoshi; Arima, Takuya; Tachiki, Minoru; Kawarada, Hiroshi.

    :: IEEE Electron Device Letters, 巻 22, 番号 8, 08.2001, p. 390-392.

    研究成果: Article

    Taniuchi, Hirotada ; Umezawa, Hitoshi ; Arima, Takuya ; Tachiki, Minoru ; Kawarada, Hiroshi. / High-frequency performance of diamond field-effect transistor. :: IEEE Electron Device Letters. 2001 ; 巻 22, 番号 8. pp. 390-392.
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