@article{38af208f2d864a90b897096b87ec3621,
title = "High-frequency performance of diamond field-effect transistor",
abstract = "The microwave performance of a diamond metal-semiconductor field-effect transistor (MESFET) is reported for the first time. MESFETs with a gate length of 2-3 μm and a source-gate spacing of 0.1 μm were fabricated on the hydrogen-terminated surface of an undoped diamond film grown by microwave plasma chemical vapor deposition (CVD) utilizing a self-aligned gate fabrication process. A maximum transconductance of 70 mS/mm was obtained on a 2 μm gate MESFET at VGS = -1.5 V and VDS = -5 V, for which a cutoff frequency fT and a maximum oscillating frequency fmax of 2.2 GHz and 7 GHz were obtained, respectively.",
keywords = "Diamond, Hydrogen-terminated surface, MESFET, ff",
author = "Hirotada Taniuchi and Hitoshi Umezawa and Takuya Arima and Minoru Tachiki and Hiroshi Kawarada",
note = "Funding Information: Manuscript received December 27, 2000; revised May 7, 200. This work was supported in part by Murata Science Foundation and Grant-in-Aid for General Scientific Research (10450127, 09555103, 11750269) from the Ministry of Education, Science, Sports and Culture of Japan, and also by a Waseda University Grant for Special Research Project (99A-212). The review of this letter was arranged by Editor T.-J. King.",
year = "2001",
month = aug,
doi = "10.1109/55.936353",
language = "English",
volume = "22",
pages = "390--392",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",
}