High-frequency performance of diamond field-effect transistor

Hirotada Taniuchi*, Hitoshi Umezawa, Takuya Arima, Minoru Tachiki, Hiroshi Kawarada

*この研究の対応する著者

研究成果: Article査読

94 被引用数 (Scopus)

抄録

The microwave performance of a diamond metal-semiconductor field-effect transistor (MESFET) is reported for the first time. MESFETs with a gate length of 2-3 μm and a source-gate spacing of 0.1 μm were fabricated on the hydrogen-terminated surface of an undoped diamond film grown by microwave plasma chemical vapor deposition (CVD) utilizing a self-aligned gate fabrication process. A maximum transconductance of 70 mS/mm was obtained on a 2 μm gate MESFET at VGS = -1.5 V and VDS = -5 V, for which a cutoff frequency fT and a maximum oscillating frequency fmax of 2.2 GHz and 7 GHz were obtained, respectively.

本文言語English
ページ(範囲)390-392
ページ数3
ジャーナルIEEE Electron Device Letters
22
8
DOI
出版ステータスPublished - 2001 8月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

フィンガープリント

「High-frequency performance of diamond field-effect transistor」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル