High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers

Tetsuya Akasaka*, Hideki Gotoh, Tadashi Saito, Toshiki Makimoto

*この研究の対応する著者

研究成果: Article査読

122 被引用数 (Scopus)

抄録

InGaN multiple quantum wells were grown on InGaN underlying layers 50 nm thick by metalorganic vapor phase epitaxy. Photoluminescence (PL) measurements were performed by selective excitation of the quantum wells under a weak excitation condition. The PL intensity was almost constant at temperatures ranging from 17 to 150 K. Assuming that the internal quantum efficiency (ηint) equals unity at 17 K, we obtained ηint as high as 0.71 even at room temperature. The reason for the high ηint is the reduction of nonradiative recombination centers by the incorporation of indium atoms into the underlying layer.

本文言語English
ページ(範囲)3089-3091
ページ数3
ジャーナルApplied Physics Letters
85
15
DOI
出版ステータスPublished - 2004 10 11
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル