抄録
A heterostructure avalanche photodiode (HAPD) with an In//0//. //5//3Ga//0//. //4//7As light absorption layer and an InP avalanche multiplication layer was successfully fabricated by a liquid phase epitaxy and a Zn-diffusion technique. This HAPD has yielded an extremely high avalanche gain of 1. 6 multiplied by 10**4 and a dark-current density as low as 1 multiplied by 10** minus **5 A cm** minus **2 at 0. 9 V//B.
| 本文言語 | English |
|---|---|
| ホスト出版物のタイトル | IEE Conference Publication |
| 出版社 | IEE |
| ページ | 226-233 |
| ページ数 | 8 |
| 版 | 190 |
| 出版ステータス | Published - 1980 |
| 外部発表 | はい |
| イベント | Eur Conf on Opt Commun, 6th - York, Engl 継続期間: 1980 9月 16 → 1980 9月 19 |
Other
| Other | Eur Conf on Opt Commun, 6th |
|---|---|
| City | York, Engl |
| Period | 80/9/16 → 80/9/19 |
ASJC Scopus subject areas
- 電子工学および電気工学