HIGH MULTIPLICATION GAIN In//0//. //5//3Ga//0//. //4//7As/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE (HAPD) FABRICATED BY DIFFUSION TECHNIQUE.

Yuichi Matsushima, K. Sakai, S. Akiba, T. Yamamoto

研究成果: Chapter

4 被引用数 (Scopus)

抄録

A heterostructure avalanche photodiode (HAPD) with an In//0//. //5//3Ga//0//. //4//7As light absorption layer and an InP avalanche multiplication layer was successfully fabricated by a liquid phase epitaxy and a Zn-diffusion technique. This HAPD has yielded an extremely high avalanche gain of 1. 6 multiplied by 10**4 and a dark-current density as low as 1 multiplied by 10** minus **5 A cm** minus **2 at 0. 9 V//B.

本文言語English
ホスト出版物のタイトルIEE Conference Publication
出版社IEE
ページ226-233
ページ数8
190
出版ステータスPublished - 1980
外部発表はい
イベントEur Conf on Opt Commun, 6th - York, Engl
継続期間: 1980 9 161980 9 19

Other

OtherEur Conf on Opt Commun, 6th
CityYork, Engl
Period80/9/1680/9/19

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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