High-performance and light-emitting n-type organic field-effect transistors based on dithienylbenzothiadiazole and related heterocycles

Takahiro Kono, Daisuke Kumaki, Jun Ichi Nishida, Tomo Sakanoue, Motoyasu Kakita, Hirokazu Tada, Shizuo Tokito, Yoshiro Yamashita*

*この研究の対応する著者

研究成果: Article査読

80 被引用数 (Scopus)

抄録

The high performance n-type field effect transistor (FET) characteristics and light-emitting properties of a dithienylbenzothiadiazole with trifluoromethylphenyl groups and the corresponding benzoselenadiazole and quinoxaline derivatives were investigated. FET devices with botton contact geometry were constructed by vapor-deposition on SiO2/Si substrate and FET measurement were carried out at room temperature in a vacuum chamber without air exposure. The FET performance was optimized by fabricating the device with top contact geometry, where gold electrodes were defined after 50 nm of semiconductor deposition by using shadow masks. The electron mobility calculated in the saturation regime was 0.19 cm2 V-1S -1 at 80°C. The emission intensity is found to be increased with an increase in drain voltages due to the increased carrier recombination. The results show that the benzothiadiazole unit reduces the threshold voltage.

本文言語English
ページ(範囲)1218-1220
ページ数3
ジャーナルChemistry of Materials
19
6
DOI
出版ステータスPublished - 2007 3 20
外部発表はい

ASJC Scopus subject areas

  • 材料化学
  • 材料科学(全般)

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