High-performance diamond metal-semiconductor field-effect transistor with 1 μm gate length

Hitoshi Umezawa, Kazuo Tsugawa, Sadanori Yamanaka, Daisuke Takeuchi, Hideyo Okushi, Hiroshi Kawarada

研究成果: Article査読

51 被引用数 (Scopus)

抄録

High-performance metal-semiconductor field-effect transistors (MESFETs) using the p-type surface conductive layer on homoepitaxial diamond are demonstrated. The maximum transconductance is 110 mS/mm, which is the highest value ever reported in diamond FETs. This value exceeds the normal transconductance of a Si-metal-oxide semiconductor field-effect transistors (MOSFET) with equivalent gate length. The transconductance of the present diamond FETs is proportional to the reciprocal of gate length. Accordingly, the characteristics can be improved by the refinement of gate length. By using an appropriate FET fabrication process, it is expected that the transconductance of a diamond MESFET exceeds 500 mS/mm at gate lengths less than 0.2 μm.

本文言語English
ページ(範囲)L1222-L1224
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
38
11 A
出版ステータスPublished - 1999 11月 1

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

フィンガープリント

「High-performance diamond metal-semiconductor field-effect transistor with 1 μm gate length」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル