High performance diamond MISFETs using CaF2 gate insulator

S. Miyamoto, H. Matsudaira, H. Ishizaka, K. Nakazawa, H. Taniuchi, H. Umezawa, M. Tachiki, H. Kawarada

研究成果: Article査読

29 被引用数 (Scopus)

抄録

A cut-off frequency of 15 GHz and a maximum frequency of oscillation of 20 GHz are realized in a 0.4-μm gate diamond metal-insulator-semiconductor field-effect transistor (MISFET). The cut-off frequency is the highest value for diamond FETs ever reported. The RF characteristics of the MISFETs are higher than those of metal-semiconductor FETs at the same gate lengths. The CaF2 gate insulator improves the carrier mobility according to the Hall measurement system. The mobility increases in the surface conductive layer result in high RF performance. The source-gate passivation of CaF2 results in the high DC transconductance because of the reduction of series resistances. A cut-off frequency of more than 30 GHz is expected with the gate minimization and the CaF2 passivation of source-gate and gate-drain spacings.

本文言語English
ページ(範囲)399-402
ページ数4
ジャーナルDiamond and Related Materials
12
3-7
DOI
出版ステータスPublished - 2003

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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