High-performance p-channel diamond MOSFETs with alumina gate insulator

Kazuyuki Hirama*, Hidenori Takayanagi, Shintaro Yamauchi, Yoshikatsu Jingu, Hitoshi Umezawa, Hiroshi Kawarada

*この研究の対応する著者

研究成果: Conference article査読

61 被引用数 (Scopus)

抄録

We evaluated diamond metal oxide semiconductor field effect transistors (MOSFETs) on (001) homoepitaxial and (110) preferentially oriented large-grain diamond films with an A12O3 gate insulator and demonstrated their improved DC and RF characteristics (IDS= -790 mA/mm and fT= 45 GHz, which are the highest values for diamond FETs). Channel mobility evaluation and load-pull measurement were carried out for the first time for diamond MOSFETs. Even on a large-grain diamond substrate, a high channel mobility of 120 cm2/Vs was obtained. This is comparable to that of a SiC inversion layer. A power density of 2.14 W/mm was obtained at 1 GHz. This power density exceeded those of Si LDMOSFETs and GaAs FETs.

本文言語English
論文番号4419088
ページ(範囲)873-876
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting, IEDM
DOI
出版ステータスPublished - 2007 12 1
イベント2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
継続期間: 2007 12 102007 12 12

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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