We evaluated diamond metal oxide semiconductor field effect transistors (MOSFETs) on (001) homoepitaxial and (110) preferentially oriented large-grain diamond films with an A12O3 gate insulator and demonstrated their improved DC and RF characteristics (IDS= -790 mA/mm and fT= 45 GHz, which are the highest values for diamond FETs). Channel mobility evaluation and load-pull measurement were carried out for the first time for diamond MOSFETs. Even on a large-grain diamond substrate, a high channel mobility of 120 cm2/Vs was obtained. This is comparable to that of a SiC inversion layer. A power density of 2.14 W/mm was obtained at 1 GHz. This power density exceeded those of Si LDMOSFETs and GaAs FETs.
|ジャーナル||Technical Digest - International Electron Devices Meeting, IEDM|
|出版ステータス||Published - 2007 12 1|
|イベント||2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States|
継続期間: 2007 12 10 → 2007 12 12
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