抄録
High-performance photodetectors (PDs) for radio over fiber (RoF) applications over 60 GHz were designed and fabricated. The RF output was investigated while a high linearity was observed for two designs: a low carrier concentration InGaAs absorption layer in a PIN structure and a low carrier concentration collection layer in a unitravelling- carrier (UTC) structure. The RF output performances of both PIN and UTC structures were studied at 67 GHz and 100 GHz respectively. High photocurrent densities could be obtained from both structures (21.7 kA/cm<sup>2</sup> in the PIN structure and 35.4 kA/cm<sup>2</sup>in the UTC structure). The PIN structure exhibited a slightly higher current density of 1.6 times than the UTC structure. The frequency response of the UTC-PD exhibited excellent flatness up to 110 GHz, with a 3 dB bandwidth beyond 110 GHz. In addition, maximum RF output powers of +6.8 dBm at 67 GHz and -5 dBm at 100 GHz was successfully obtained. The space charge effect could be ruled out for the output linearity, but avoiding overheating in the p-contact metal had to be considered. By modifying impedance matching circuit designs, the maximum RF output power level of 3 dB can be improved.
本文言語 | English |
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ホスト出版物のタイトル | Proceedings of SPIE - The International Society for Optical Engineering |
出版社 | SPIE |
巻 | 9362 |
版 | January |
DOI | |
出版ステータス | Published - 2015 |
外部発表 | はい |
イベント | 2015 Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VIII Conference - San Francisco, United States 継続期間: 2015 2 10 → 2015 2 12 |
Other
Other | 2015 Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VIII Conference |
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Country | United States |
City | San Francisco |
Period | 15/2/10 → 15/2/12 |
ASJC Scopus subject areas
- Applied Mathematics
- Computer Science Applications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics