High-power, 790 nm, eight-beam AlGaAs laser array with a monitoring photodiode

Kimihide Minakuchi, Yasuyuki Bessho, Yasuaki Inoue, Koji Komeda, Norio Tabuchi, Koji Tominaga, Atsushi Tajiri, Keiichi Yodoshi, Takao Yamaguchi

研究成果: Article

9 引用 (Scopus)

抜粋

A high-power, 790 nm, eight-beam individually addressable AlGaAs laser array on 50 μm centers with a monitoring photodiode has been developed for high-speed data transfer in optical memory systems. The maximum output power of each element is over 80 mW. When eight elements are simultaneously operated at 20 mW in APC (Automatic Power Control) mode using the one-beam monitoring control, the total light output variation is less than 7% at a heatsink temperature between 10 and 50°C.

元の言語English
ページ(範囲)508-512
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
31
発行部数2 B
出版物ステータスPublished - 1992 2
外部発表Yes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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  • これを引用

    Minakuchi, K., Bessho, Y., Inoue, Y., Komeda, K., Tabuchi, N., Tominaga, K., Tajiri, A., Yodoshi, K., & Yamaguchi, T. (1992). High-power, 790 nm, eight-beam AlGaAs laser array with a monitoring photodiode. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 31(2 B), 508-512.