High power AlGaAs/GaAs HBTs and their application to mobile communications systems

研究成果: Conference article査読

7 被引用数 (Scopus)

抄録

This paper addresses the power application of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) to L-band mobile communications systems. From points of view of circuit and systems design, features of HBT technology are discussed and compared with those of GaAs MESFET technology.

本文言語English
ページ(範囲)787-790
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting
出版ステータスPublished - 1995 12 1
外部発表はい
イベントProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
継続期間: 1995 12 101995 12 13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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