抄録
This paper addresses the power application of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) to L-band mobile communications systems. From points of view of circuit and systems design, features of HBT technology are discussed and compared with those of GaAs MESFET technology.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 787-790 |
| ページ数 | 4 |
| ジャーナル | Technical Digest - International Electron Devices Meeting |
| 出版ステータス | Published - 1995 12 1 |
| 外部発表 | はい |
| イベント | Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA 継続期間: 1995 12 10 → 1995 12 13 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry