High-power characteristics of GaN/InGaN double heterojunction bipolar transistors with a regrown p-InGaN base layer

Toshiki Makimoto, Yoshiharu Yamauchi, Kazuhide Kumakura

研究成果: Conference article査読

抄録

We have investigated high-power characteristics of GaN/InGaN double heterojunction bipolar transistors on SiC substrates grown by metalorganic vapor phase epitaxy. The p-InGaN extrinsic base layers were regrown to improve ohmic characteristics of the base. Base-collector diodes showed low leakage current at their reverse bias voltages due to a wide bandgap of a GaN collector, resulting in a high-voltage transistor operation. A 90 μm × 50 μm device operated up to a collector-emitter voltage of 28 V and a collector current of 0.37 A in its common-emitter current-voltage characteristics at room temperature, which corresponds to a DC power of 10.4 W. A collector current density and a power density are as high as 8.2 kA/cm2 and 230 kW/cm2, respectively. These results show that nitride HBTs are promising for high-power electronic devices.

本文言語English
ページ(範囲)73-78
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
798
出版ステータスPublished - 2003 12 1
外部発表はい
イベントGaN and Related Alloys - 2003 - Boston, MA, United States
継続期間: 2003 12 12003 12 5

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

フィンガープリント

「High-power characteristics of GaN/InGaN double heterojunction bipolar transistors with a regrown p-InGaN base layer」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル