High-power characteristics of GaN/InGaN double heterojunction bipolar transistors

Toshiki Makimoto*, Yoshiharu Yamauchi, Kazuhide Kumakura

*この研究の対応する著者

研究成果: Article査読

64 被引用数 (Scopus)

抄録

The high-power characteristics of GaN/InGaN double heterojunction bipolar transistors (HBT) were investigated. It was observed that the maximum collector current was not limited by the thermal effect but by the Kirk effect. It was also observed that the maximum collecter current is proportional to the emitter size. It was found that the breakdown voltage of base-collecter diode exceeded 50 V due to the wide band gap of the n-GaN collector.

本文言語English
ページ(範囲)1964-1966
ページ数3
ジャーナルApplied Physics Letters
84
11
DOI
出版ステータスPublished - 2004 3月 15
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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