High-power characteristics of GaN/InGaN double heterojunction bipolar transistors

Toshiki Makimoto, Yoshiharu Yamauchi, Kazuhide Kumakura

研究成果: Article

59 引用 (Scopus)

抄録

The high-power characteristics of GaN/InGaN double heterojunction bipolar transistors (HBT) were investigated. It was observed that the maximum collector current was not limited by the thermal effect but by the Kirk effect. It was also observed that the maximum collecter current is proportional to the emitter size. It was found that the breakdown voltage of base-collecter diode exceeded 50 V due to the wide band gap of the n-GaN collector.

元の言語English
ページ(範囲)1964-1966
ページ数3
ジャーナルApplied Physics Letters
84
発行部数11
DOI
出版物ステータスPublished - 2004 3 15
外部発表Yes

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bipolar transistors
accumulators
heterojunctions
electrical faults
temperature effects
emitters
diodes
broadband

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

High-power characteristics of GaN/InGaN double heterojunction bipolar transistors. / Makimoto, Toshiki; Yamauchi, Yoshiharu; Kumakura, Kazuhide.

:: Applied Physics Letters, 巻 84, 番号 11, 15.03.2004, p. 1964-1966.

研究成果: Article

Makimoto, Toshiki ; Yamauchi, Yoshiharu ; Kumakura, Kazuhide. / High-power characteristics of GaN/InGaN double heterojunction bipolar transistors. :: Applied Physics Letters. 2004 ; 巻 84, 番号 11. pp. 1964-1966.
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