High power extraction of 340-350 nm UV-LEDs

Toshio Nishida*, Tomoyuki Ban, Hisao Saito, Naoki Kobayashi, Toshiki Makimoto

*この研究の対応する著者

研究成果: Conference article査読

1 被引用数 (Scopus)

抄録

The potential of high power extraction from AlGaN-based ultraviolet light emitting diodes (UV-LEDs) is described. Improvements of UV-LEDs are shortly introduced from the viewpoints of nitride epitaxial growth, heterostracture optical characteristics based on the internal polarization field, and p-n junction design. The UV light extraction enhancement by utilizing the GaN-free transparent UV-LED structure and highly efficient UV-LEDs fabricated by introducing a high-quality AlN template on sapphire substrate are described. The maximum output powers are 8.6 mW and 5.5 mW at an injection current of less than 150 mA, at the emission wavelength of 350 nm and 340 nm, respectively. The highest external quantum efficiencies are 2.2 and 1.7 %, respectively. The application to white lighting and the potential of the high-flux UV-extraction utilizing bulk AlN substrate are also investigated.

本文言語English
ページ(範囲)387-399
ページ数13
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
5359
DOI
出版ステータスPublished - 2004 9月 13
外部発表はい
イベントQuantum Sensing and Nanophotonic Devices - San Jose, CA, United States
継続期間: 2004 1月 252004 1月 29

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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