High-power operation in self-sustained pulsating AlGaAs semiconductor lasers with multiquantum well active layer

T. Tanaka*, T. Kawano, T. Kajimura

*この研究の対応する著者

研究成果: Article査読

13 被引用数 (Scopus)

抄録

Self-sustained pulsating optical power and kink level in AlGaAs semiconductor lasers are remarkably improved by introducing a multiquantum well (MQW) structure in the active layer. Stable fundamental transverse mode operation at output power up to 50 mW and self-sustained pulsation at output power up to 40 mW are obtained simultaneously for MQW lasers with antireflective and high-reflective coatings on the facets. Low-noise characteristics (relative intensity noise of less than 10-13 Hz -1 under 3-4% optical feedback) are obtained in the output power range from 7 to 17 mW in MQW lasers with high-reflective coating on the rear facet. These results suggest that low-noise high-power characteristics can be achieved in self-sustained pulsating lasers with a MQW active layer.

本文言語English
ページ(範囲)2471-2473
ページ数3
ジャーナルApplied Physics Letters
53
25
DOI
出版ステータスPublished - 1988 12月 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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