TY - JOUR
T1 - High-power operation of self-sustained pulsating AlGaAs semiconductor lasers with multiquantum well active layer
AU - Tanaka, Toshiaki
AU - Kawano, Toshihiro
AU - Kajimura, Takashi
PY - 1989/11
Y1 - 1989/11
N2 - Improvement of kink level in self-sustained pulsating multiquantum well (MQW) lasers is mainly examined by controlling the built-in refractive index difference parallel to the junction. Furthermore, it is shown that the offset power level of self-pulsation is suppressed by increasing the effective refractive index difference. Kink level can be improved to over 30 mW in lasers without facet coatings. Relative intensity noise of 10−13 Hz−1 under optical feedback of 3∼4% is also attained from 4 to 7 mW. With antireflective and reflective facet coatings, stable transverse-mode operation over 70 mW is achieved.
AB - Improvement of kink level in self-sustained pulsating multiquantum well (MQW) lasers is mainly examined by controlling the built-in refractive index difference parallel to the junction. Furthermore, it is shown that the offset power level of self-pulsation is suppressed by increasing the effective refractive index difference. Kink level can be improved to over 30 mW in lasers without facet coatings. Relative intensity noise of 10−13 Hz−1 under optical feedback of 3∼4% is also attained from 4 to 7 mW. With antireflective and reflective facet coatings, stable transverse-mode operation over 70 mW is achieved.
KW - High-power low-noise characteristics
KW - Kink level
KW - MQW active layer
KW - Self-sustained pulsating semiconductor laser
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U2 - 10.1143/JJAP.28.L2078
DO - 10.1143/JJAP.28.L2078
M3 - Article
AN - SCOPUS:0024768233
VL - 28
SP - L2078-L2080
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 11 A
ER -