High-power operation of self-sustained pulsating AlGaAs semiconductor lasers with multiquantum well active layer

Toshiaki Tanaka, Toshihiro Kawano, Takashi Kajimura

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Improvement of kink level in self-sustained pulsating multiquantum well (MQW) lasers is mainly examined by controlling the built-in refractive index difference parallel to the junction. Furthermore, it is shown that the offset power level of self-pulsation is suppressed by increasing the effective refractive index difference. Kink level can be improved to over 30 mW in lasers without facet coatings. Relative intensity noise of 10−13 Hz−1 under optical feedback of 3∼4% is also attained from 4 to 7 mW. With antireflective and reflective facet coatings, stable transverse-mode operation over 70 mW is achieved.

本文言語English
ページ(範囲)L2078-L2080
ジャーナルJapanese journal of applied physics
28
11 A
DOI
出版ステータスPublished - 1989 11月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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