High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond

K. Ueda, M. Kasu, T. Makimoto

研究成果: Article査読

25 被引用数 (Scopus)

抄録

The authors show that high-pressure and high-temperature (HPHT) annealing is very effective for the activation of ion-implanted dopants in diamond. The HPHT annealing condition is located in the thermodynamically stable region for diamond in the phase diagram and is, therefore, much more efficient for the recovery of implantation-induced damage and for the activation of ion-implanted dopants than thermal annealing in vacuum. The B-implanted film after HPHT annealing showed a high mobility of 632 cm2 V s with a sheet hole concentration of 4.8× 1010 cm-2 at 300 K and the doping efficiency of ∼7%. The mobility is the highest so far for ion-implanted diamond. In the entire annealing temperature range, the HPHT annealing is more efficient than the thermal annealing in vacuum.

本文言語English
論文番号122102
ジャーナルApplied Physics Letters
90
12
DOI
出版ステータスPublished - 2007
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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