High purity ozone oxidation on hydrogen passivated silicon surface

A. Kurokawa*, S. Ichimura

*この研究の対応する著者

研究成果: Article査読

24 被引用数 (Scopus)

抄録

High purity ozone was used to oxidize hydrogen passivated Si(111) surface. Initial oxide formation was investigated with X-ray photoelectron spectroscopy. The ozone oxidation was disturbed when the surface was gradually covered with hydrogen and finally the rate of oxide formation was reduced to one tenth when the surface was completely covered with hydrogen. This reduction rate is very small compared to the reduction rate for oxygen exposure which is reported to be 10 12 . Ozone oxidation still proceeds on the hydrogen passivated surface where oxygen molecule does not adsorb at all. Three backbonds of a Si atom are changed to Si-O-Si bridges simultaneously when ozone oxidation proceeds on the hydrogen passivated surface.

本文言語English
ページ(範囲)436-439
ページ数4
ジャーナルApplied Surface Science
100-101
DOI
出版ステータスPublished - 1996 7
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

フィンガープリント

「High purity ozone oxidation on hydrogen passivated silicon surface」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル