High quality gate dielectric film on poly-silicon grown at room temperature using UV light excited ozone

N. Kameda*, T. Nishiguchi, Y. Morikawa, M. Kekura, H. Nonaka, S. Ichimura

*この研究の対応する著者

研究成果: Article査読

19 被引用数 (Scopus)

抄録

We have grown Si O2 films on polycrystalline Si using excited ozone produced by ultraviolet light irradiation of ozone, and characterized their electrical properties in the metal-insulator-semiconductor capacitor configuration. Si O2 films of ∼8.5 nm thickness on poly-Si layers were grown in 60 min even at room temperature. The leakage current density across the Si O2 film fitted well the Fowler-Nordheim tunnel current behavior and breakdown occurred at above 12 MVcm, showing that the film was of device quality. The rate of Si oxidation by excited ozone was similar for both Si(100) and Si(111) wafers, as was the interface trap density (Dit). These results indicate that excited ozone can form a homogenous Si O2 film on poly-silicon. We conclude that excited ozone is one of the most efficient reactive species for Si O2 film formation on poly-Si at room temperature.

本文言語English
ページ(範囲)H769-H772
ジャーナルJournal of the Electrochemical Society
154
9
DOI
出版ステータスPublished - 2007 8 6
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学

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