High-quality Zn-diffused InP-related materials fabricated by the open-tube technique

T. Tsuchiya*, T. Taniwatari, T. Haga, T. Kawano

*この研究の対応する著者

研究成果査読

1 被引用数 (Scopus)

抄録

The crystal quality of a Zn-diffused thick In0.76Ga0.24As0.55P0.45/InP structure created by the open-tube technique is evaluated. Dislocations, defects and the second photoluminescence peak are not observed. The intermixing of the Zn-diffused In0.47Ga0.53As/InP multiple quantum wells structure at the heterointerface is investigated, and the results show that no intermixing of In and Ga at the heterointerface between In0.47Ga0.53As well layers and InP barrier layers occur, even for very thin layers.

本文言語English
ページ(範囲)664-667
ページ数4
ジャーナルConference Proceedings - International Conference on Indium Phosphide and Related Materials
出版ステータスPublished - 1995 1 1
外部発表はい
イベントProceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn
継続期間: 1995 5 91995 5 13

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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