TY - JOUR
T1 - High-quality Zn-diffused InP-related materials fabricated by the open-tube technique
AU - Tsuchiya, T.
AU - Taniwatari, T.
AU - Haga, T.
AU - Kawano, T.
PY - 1995/1/1
Y1 - 1995/1/1
N2 - The crystal quality of a Zn-diffused thick In0.76Ga0.24As0.55P0.45/InP structure created by the open-tube technique is evaluated. Dislocations, defects and the second photoluminescence peak are not observed. The intermixing of the Zn-diffused In0.47Ga0.53As/InP multiple quantum wells structure at the heterointerface is investigated, and the results show that no intermixing of In and Ga at the heterointerface between In0.47Ga0.53As well layers and InP barrier layers occur, even for very thin layers.
AB - The crystal quality of a Zn-diffused thick In0.76Ga0.24As0.55P0.45/InP structure created by the open-tube technique is evaluated. Dislocations, defects and the second photoluminescence peak are not observed. The intermixing of the Zn-diffused In0.47Ga0.53As/InP multiple quantum wells structure at the heterointerface is investigated, and the results show that no intermixing of In and Ga at the heterointerface between In0.47Ga0.53As well layers and InP barrier layers occur, even for very thin layers.
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M3 - Conference article
AN - SCOPUS:0029228695
SP - 664
EP - 667
JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
SN - 1092-8669
T2 - Proceedings of the 7th International Conference on Indium Phosphide and Related Materials
Y2 - 9 May 1995 through 13 May 1995
ER -