High reliability poly-oxide grown on in-situ phosphorus doped amorphous Si

Takashi Kobayashi*, Shinpei Iijima, Atsushi Hiraiwa

*この研究の対応する著者

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

A high reliability poly-oxide was obtained by oxidizing in-situ phosphorus doped amorphous silicon. Critical electric field, Ec, of the poly-oxide increased with dopant concentration, and reached 7.5MV/cm, which is comparable to the oxide of single crystalline Si. Ec showed no decrease for Si films that contained as much as 2×1021 cm-3 dopants. Conventional models cannot explain the high Ec. We proposed a new model in which defect reduction in grains lead to the high Ec on the highly-doped Si film.

本文言語English
ホスト出版物のタイトルConference on Solid State Devices and Materials
編集者 Anon
Place of PublicationTokyo, Japan
出版社Publ by Business Cent for Acad Soc Japan
ページ191-194
ページ数4
出版ステータスPublished - 1990
外部発表はい
イベント22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
継続期間: 1990 8月 221990 8月 24

Other

Other22nd International Conference on Solid State Devices and Materials
CitySendai, Jpn
Period90/8/2290/8/24

ASJC Scopus subject areas

  • 工学(全般)

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