High-resolution Compton cameras based on Si/CdTe double-sided strip detectors

Hirokazu Odaka, Yuto Ichinohe, Shinichiro Takeda, Taro Fukuyama, Koichi Hagino, Shinya Saito, Tamotsu Sato, Goro Sato, Shin Watanabe, Motohide Kokubun, Tadayuki Takahashi, Mitsutaka Yamaguchi, Takaaki Tanaka, Hiroyasu Tajima, Kazuhiro Nakazawa, Yasushi Fukazawa

研究成果: Article査読

20 被引用数 (Scopus)

抄録

We have developed a new Compton camera based on silicon (Si) and cadmium telluride (CdTe) semiconductor double-sided strip detectors (DSDs). The camera consists of a 500-μm-thick Si-DSD and four layers of 750-μm-thick CdTe-DSDs all of which have common electrode configuration segmented into 128 strips on each side with pitches of 250μm. In order to realize high angular resolution and to reduce size of the detector system, a stack of DSDs with short stack pitches of 4 mm is utilized to make the camera. Taking advantage of the excellent energy and position resolutions of the semiconductor devices, the camera achieves high angular resolutions of 4.5° at 356 keV and 3.5° at 662 keV. To obtain such high resolutions together with an acceptable detection efficiency, we demonstrate data reduction methods including energy calibration using Compton scattering continuum and depth sensing in the CdTe-DSD. We also discuss imaging capability of the camera and show simultaneous multi-energy imaging.

本文言語English
ページ(範囲)179-183
ページ数5
ジャーナルNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
695
DOI
出版ステータスPublished - 2012 12 11

ASJC Scopus subject areas

  • 器械工学
  • 核物理学および高エネルギー物理学

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