High-resolution electron microscope study of the PtSi-Si(111) interface

H. Kawarada, M. Ishida, J. Nakanishi, I. Ohdomari, S. Horiuchi

研究成果査読

14 被引用数 (Scopus)

抄録

The atomic arrangement of the PtSi-Si(111) interface and epitaxial growth of PtSi on Si(111) have been investigated using lattice imaging. Small PtSi domains (20–40nm) which have three equivalent positions on Si(111) grow epitaxially all over the substrate with an atomically uneven interface. However, the transition from a PtSi lattice to a Si lattice is abrupt. The interface has atomic steps, which have been verified by image simulations at the interface. Atomic-scale models of the interface consistent with the observed lattice images have been derived. In the proposed models, inclined interfaces increase the local coherency between PtSi and Si. The validity of the models has been examined by classical ideas of interphase boundaries.

本文言語English
ページ(範囲)729-741
ページ数13
ジャーナルPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
54
5
DOI
出版ステータスPublished - 1986 11

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 材料科学(全般)
  • 凝縮系物理学
  • 物理学および天文学(その他)
  • 金属および合金

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