HIGH-RESOLUTION ELECTRON MICROSCOPE STUDY OF THE PtSi-Si(111) INTERFACE.

Hiroshi Kawarada, M. Ishida, J. Nakanishi, I. Ohdomari, S. Horiuchi

    研究成果: Article

    14 引用 (Scopus)

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    The atomic arrangement of the PtSi-Si(111) interface and epitaxial growth of PtSi on Si(111) have been investigated using lattice imaging. Small PtSi domains (20-40 nm) which have three equivalent positions on Si(111) grow epitaxially all over the substrate with an atomically uneven interface. However, the transition from a PtSi lattice to a Si lattice is abrupt. The interface has atomic steps, which have been verified by image simulations at the interface. Atomic-scale models of the interface consistent with the observed lattice images have been derived. In the proposed models, inclined interfaces increase the local coherency between PtSi and Si. The validity of the models has been examined by classical ideas of interphase boundaries.

    元の言語English
    ページ(範囲)729-741
    ページ数13
    ジャーナルPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
    54
    発行部数5
    出版物ステータスPublished - 1986 11

      フィンガープリント

    ASJC Scopus subject areas

    • Materials Science(all)
    • Electronic, Optical and Magnetic Materials
    • Metals and Alloys
    • Physics and Astronomy (miscellaneous)
    • Condensed Matter Physics

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