High-resolution Schottky CdTe diode detector

Tadayuki Takahashi*, Takefumi Mitani, Yoshihito Kobayashi, Manabu Kouda, Goro Sato, Shin Watanabe, Kazuhiro Nakazawa, Yuu Okada, Minoru Funaki, Ryoichi Ohno, Kunishiro Mori

*この研究の対応する著者

研究成果: Article査読

97 被引用数 (Scopus)

抄録

We describe recent progress on the use of Schottky CdTe diode detectors for spectrometry. The low leakage current of the CdTe diode allows us to apply a much higher bias voltage than was possible with previous CdTe detectors. For a relatively thin detector of 0.5-1 mm thickness, the high bias voltage results in a high electric field in the device. Both the improved charge-collection efficiency and the low-leakage current lead to an energy resolution of better than 600 eV full-width at half-maximum at 60 keV for a 2 × 2 mm2 device without any charge-loss correction electronics. Large-area detectors with dimensions of 21 × 21 mm2 are now available with an energy resolution of ∼ 2.8 keV. Long-term stability can be easily attained for relatively thin (< 1 mm) detectors if they are cooled or operated under a high bias voltage.

本文言語English
ページ(範囲)1297-1303
ページ数7
ジャーナルIEEE Transactions on Nuclear Science
49 II
3
DOI
出版ステータスPublished - 2002 6月

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 原子力エネルギーおよび原子力工学

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