High resolution Schottky CdTe diode detector

Tadayuki Takahashi, Takefumi Mitani, Yoshihito Kobayashi, Manabu Kouda, Goro Sato, Shin Watanabe, Kazuhiro Nakazawa, Yuu Okada, Minoru Funaki, Ryoichi Ohno, Kunishiro Mori

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

We describe recent progress on the use of Schottky CdTe diode detectors for spectrometry. The low leakage current of the CdTe diode allows us to apply a much higher bias voltage than was possible with previous CdTe detectors. For a relatively thin detector of 0.5-1 mm thick, the high bias voltage results in a high electric field in the device. Both the improved charge collection efficiency and the low-leakage current lead to an energy resolution of better than 600 eV FWHM at 60 keV for a 2×2 mm 2 device without any charge-loss correction electronics. Large area detectors with dimensions of 21×21 mm 2 are now available with an energy resolution of ∼2.8 keV. Long term stability can be easily attained for relatively thin (< 1 mm) detectors, if they are cooled or operated under a high bias voltage.

本文言語English
ホスト出版物のタイトルIEEE Nuclear Science Symposium and Medical Imaging Conference
ページ2464-2468
ページ数5
4
出版ステータスPublished - 2002
イベント2001 IEEE Nuclear Science Symposium Conference Record - San Diego, CA
継続期間: 2001 11 42001 11 10

Other

Other2001 IEEE Nuclear Science Symposium Conference Record
CitySan Diego, CA
Period01/11/401/11/10

ASJC Scopus subject areas

  • コンピュータ ビジョンおよびパターン認識
  • 産業および生産工学

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