High-resolution X-ray diffraction analysis of `device-quality' cubic GaN grown on (001) GaAs substrate prepared by atomic-hydrogen treatment at `high temperatures'

A. Yoshikawa, Z. X. Qin, H. Nagano, Y. Sugure, A. W. Jia, M. Kobayashi, M. Shimotomai, Y. Kato, K. Takahashi

研究成果: Conference article

抜粋

Cubic GaN (c-GaN) layers were grown by rf-plasma source MBE on (001) GaAs prepared by atomic-hydrogen treatment at `high temperatures', and the structural properties of the epilayers were investigated by the high-resolution X-ray rocking curve and the reciprocal space mapping measurements. The growth temperature was varied from 620 to 740 °C. It was found that single domain `device-quality' c-GaN layers could be grown for the first time; the FWHM of the X-ray rocking curves for the (002) c-GaN could be as small as 70-90 arcsec and the inclusion of h-GaN phase in the c-GaN epilayers grown at temperatures above 680 °C could be less than 4×103.

元の言語English
ページ(範囲)465-470
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
482
出版物ステータスPublished - 1997 12 1
イベントProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
継続期間: 1997 12 11997 12 4

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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