High-resolution X-ray diffraction analysis of `device-quality' cubic GaN grown on (001) GaAs substrate prepared by atomic-hydrogen treatment at `high temperatures'

A. Yoshikawa, Z. X. Qin, H. Nagano, Y. Sugure, A. W. Jia, Masakazu Kobayashi, M. Shimotomai, Y. Kato, K. Takahashi

研究成果: Conference contribution

5 引用 (Scopus)

抄録

Cubic GaN (c-GaN) layers were grown by rf-plasma source MBE on (001) GaAs prepared by atomic-hydrogen treatment at `high temperatures', and the structural properties of the epilayers were investigated by the high-resolution X-ray rocking curve and the reciprocal space mapping measurements. The growth temperature was varied from 620 to 740 °C. It was found that single domain `device-quality' c-GaN layers could be grown for the first time; the FWHM of the X-ray rocking curves for the (002) c-GaN could be as small as 70-90 arcsec and the inclusion of h-GaN phase in the c-GaN epilayers grown at temperatures above 680 °C could be less than 4×10 3.

元の言語English
ホスト出版物のタイトルMaterials Research Society Symposium - Proceedings
編集者S.R. Phillpot, P.D. Bristowe, D.G. Stroud, J.R. Smith
出版者MRS
ページ465-470
ページ数6
482
出版物ステータスPublished - 1997
外部発表Yes
イベントProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
継続期間: 1997 12 11997 12 4

Other

OtherProceedings of the 1997 MRS Fall Meeting
Boston, MA, USA
期間97/12/197/12/4

Fingerprint

Epilayers
X ray diffraction analysis
Hydrogen
X rays
Plasma sources
Growth temperature
Substrates
Full width at half maximum
Molecular beam epitaxy
Structural properties
Temperature
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

これを引用

Yoshikawa, A., Qin, Z. X., Nagano, H., Sugure, Y., Jia, A. W., Kobayashi, M., ... Takahashi, K. (1997). High-resolution X-ray diffraction analysis of `device-quality' cubic GaN grown on (001) GaAs substrate prepared by atomic-hydrogen treatment at `high temperatures'. : S. R. Phillpot, P. D. Bristowe, D. G. Stroud, & J. R. Smith (版), Materials Research Society Symposium - Proceedings (巻 482, pp. 465-470). MRS.

High-resolution X-ray diffraction analysis of `device-quality' cubic GaN grown on (001) GaAs substrate prepared by atomic-hydrogen treatment at `high temperatures'. / Yoshikawa, A.; Qin, Z. X.; Nagano, H.; Sugure, Y.; Jia, A. W.; Kobayashi, Masakazu; Shimotomai, M.; Kato, Y.; Takahashi, K.

Materials Research Society Symposium - Proceedings. 版 / S.R. Phillpot; P.D. Bristowe; D.G. Stroud; J.R. Smith. 巻 482 MRS, 1997. p. 465-470.

研究成果: Conference contribution

Yoshikawa, A, Qin, ZX, Nagano, H, Sugure, Y, Jia, AW, Kobayashi, M, Shimotomai, M, Kato, Y & Takahashi, K 1997, High-resolution X-ray diffraction analysis of `device-quality' cubic GaN grown on (001) GaAs substrate prepared by atomic-hydrogen treatment at `high temperatures'. : SR Phillpot, PD Bristowe, DG Stroud & JR Smith (版), Materials Research Society Symposium - Proceedings. 巻. 482, MRS, pp. 465-470, Proceedings of the 1997 MRS Fall Meeting, Boston, MA, USA, 97/12/1.
Yoshikawa A, Qin ZX, Nagano H, Sugure Y, Jia AW, Kobayashi M その他. High-resolution X-ray diffraction analysis of `device-quality' cubic GaN grown on (001) GaAs substrate prepared by atomic-hydrogen treatment at `high temperatures'. : Phillpot SR, Bristowe PD, Stroud DG, Smith JR, 編集者, Materials Research Society Symposium - Proceedings. 巻 482. MRS. 1997. p. 465-470
Yoshikawa, A. ; Qin, Z. X. ; Nagano, H. ; Sugure, Y. ; Jia, A. W. ; Kobayashi, Masakazu ; Shimotomai, M. ; Kato, Y. ; Takahashi, K. / High-resolution X-ray diffraction analysis of `device-quality' cubic GaN grown on (001) GaAs substrate prepared by atomic-hydrogen treatment at `high temperatures'. Materials Research Society Symposium - Proceedings. 編集者 / S.R. Phillpot ; P.D. Bristowe ; D.G. Stroud ; J.R. Smith. 巻 482 MRS, 1997. pp. 465-470
@inproceedings{3cb0f6496769491489409cfc609f0de4,
title = "High-resolution X-ray diffraction analysis of `device-quality' cubic GaN grown on (001) GaAs substrate prepared by atomic-hydrogen treatment at `high temperatures'",
abstract = "Cubic GaN (c-GaN) layers were grown by rf-plasma source MBE on (001) GaAs prepared by atomic-hydrogen treatment at `high temperatures', and the structural properties of the epilayers were investigated by the high-resolution X-ray rocking curve and the reciprocal space mapping measurements. The growth temperature was varied from 620 to 740 °C. It was found that single domain `device-quality' c-GaN layers could be grown for the first time; the FWHM of the X-ray rocking curves for the (002) c-GaN could be as small as 70-90 arcsec and the inclusion of h-GaN phase in the c-GaN epilayers grown at temperatures above 680 °C could be less than 4×10 3.",
author = "A. Yoshikawa and Qin, {Z. X.} and H. Nagano and Y. Sugure and Jia, {A. W.} and Masakazu Kobayashi and M. Shimotomai and Y. Kato and K. Takahashi",
year = "1997",
language = "English",
volume = "482",
pages = "465--470",
editor = "S.R. Phillpot and P.D. Bristowe and D.G. Stroud and J.R. Smith",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "MRS",

}

TY - GEN

T1 - High-resolution X-ray diffraction analysis of `device-quality' cubic GaN grown on (001) GaAs substrate prepared by atomic-hydrogen treatment at `high temperatures'

AU - Yoshikawa, A.

AU - Qin, Z. X.

AU - Nagano, H.

AU - Sugure, Y.

AU - Jia, A. W.

AU - Kobayashi, Masakazu

AU - Shimotomai, M.

AU - Kato, Y.

AU - Takahashi, K.

PY - 1997

Y1 - 1997

N2 - Cubic GaN (c-GaN) layers were grown by rf-plasma source MBE on (001) GaAs prepared by atomic-hydrogen treatment at `high temperatures', and the structural properties of the epilayers were investigated by the high-resolution X-ray rocking curve and the reciprocal space mapping measurements. The growth temperature was varied from 620 to 740 °C. It was found that single domain `device-quality' c-GaN layers could be grown for the first time; the FWHM of the X-ray rocking curves for the (002) c-GaN could be as small as 70-90 arcsec and the inclusion of h-GaN phase in the c-GaN epilayers grown at temperatures above 680 °C could be less than 4×10 3.

AB - Cubic GaN (c-GaN) layers were grown by rf-plasma source MBE on (001) GaAs prepared by atomic-hydrogen treatment at `high temperatures', and the structural properties of the epilayers were investigated by the high-resolution X-ray rocking curve and the reciprocal space mapping measurements. The growth temperature was varied from 620 to 740 °C. It was found that single domain `device-quality' c-GaN layers could be grown for the first time; the FWHM of the X-ray rocking curves for the (002) c-GaN could be as small as 70-90 arcsec and the inclusion of h-GaN phase in the c-GaN epilayers grown at temperatures above 680 °C could be less than 4×10 3.

UR - http://www.scopus.com/inward/record.url?scp=0031388677&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031388677&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0031388677

VL - 482

SP - 465

EP - 470

BT - Materials Research Society Symposium - Proceedings

A2 - Phillpot, S.R.

A2 - Bristowe, P.D.

A2 - Stroud, D.G.

A2 - Smith, J.R.

PB - MRS

ER -