High RF output power for H-terminated diamond FETs

M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki, T. Makimoto

研究成果: Article査読

56 被引用数 (Scopus)

抄録

We report great improvement of RF output power for H-terminated diamond field-effect transistors (FETs). For the FET device with a gate width of 1 mm and a gate length of 0.4 μm, the maximum output power (Pout) is 1.26 W, the maximum power gain is 23.2 dB, and the power added efficiency (PAE) is 56.3%. The increase in the device temperature when output power is 0.84 W is only ∼0.6 °C. This is due to diamond having the highest thermal conductivity.

本文言語English
ページ(範囲)783-786
ページ数4
ジャーナルDiamond and Related Materials
15
4-8
DOI
出版ステータスPublished - 2006 4 1
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Materials Chemistry
  • Electrical and Electronic Engineering

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