High RF output power for H-terminated diamond FETs

M. Kasu; K. Ueda; H. Ye; Y. Yamauchi; S. Sasaki; T. Makimoto

doi:10.1016/j.diamond.2005.12.025

High RF output power for H-terminated diamond FETs

M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki, T. Makimoto

研究成果: Article › 査読

56 被引用数 (Scopus)

抄録

We report great improvement of RF output power for H-terminated diamond field-effect transistors (FETs). For the FET device with a gate width of 1 mm and a gate length of 0.4 μm, the maximum output power (P_out) is 1.26 W, the maximum power gain is 23.2 dB, and the power added efficiency (PAE) is 56.3%. The increase in the device temperature when output power is 0.84 W is only ∼0.6 °C. This is due to diamond having the highest thermal conductivity.

本文言語	English
ページ（範囲）	783-786
ページ数	4
ジャーナル	Diamond and Related Materials
巻	15
号	4-8
DOI	https://doi.org/10.1016/j.diamond.2005.12.025
出版ステータス	Published - 2006 4 1
外部発表	はい

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Physics and Astronomy(all)
Materials Chemistry
Electrical and Electronic Engineering

文献へのアクセス

10.1016/j.diamond.2005.12.025

フィンガープリント「High RF output power for H-terminated diamond FETs」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

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AU - Kasu, M.

AU - Ueda, K.

AU - Ye, H.

AU - Yamauchi, Y.

AU - Sasaki, S.

AU - Makimoto, T.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - We report great improvement of RF output power for H-terminated diamond field-effect transistors (FETs). For the FET device with a gate width of 1 mm and a gate length of 0.4 μm, the maximum output power (Pout) is 1.26 W, the maximum power gain is 23.2 dB, and the power added efficiency (PAE) is 56.3%. The increase in the device temperature when output power is 0.84 W is only ∼0.6 °C. This is due to diamond having the highest thermal conductivity.

AB - We report great improvement of RF output power for H-terminated diamond field-effect transistors (FETs). For the FET device with a gate width of 1 mm and a gate length of 0.4 μm, the maximum output power (Pout) is 1.26 W, the maximum power gain is 23.2 dB, and the power added efficiency (PAE) is 56.3%. The increase in the device temperature when output power is 0.84 W is only ∼0.6 °C. This is due to diamond having the highest thermal conductivity.

KW - Diamond

KW - FET

KW - H-termination

KW - MESFET

KW - Power

KW - RF

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