High room-temperature hole concentrations above 1019 cm-3 in Mg-doped InGaN/GaN superlattices

K. Kumakura*, T. Makimoto, N. Kobayashi

*この研究の対応する著者

研究成果: Conference article査読

5 被引用数 (Scopus)

抄録

We achieved high hole concentrations above 1019 cm3 at room temperature in Mg-doped InxGa1-xN/GaN (4 nm/4 nm) superlattices grown by metalorganic vapor phase epitaxy. The hole concentrations for the InxGa1-xN/GaN superlattices increased With the In mole fraction, and the maximum hole concentration reached 2.8 × 1019 cm-3 for the In0.22Ga0.78N/GaN superlattice. The hole concentrations for the superlattices strongly depend on the structural parameters of the superlattices. The band bending due to the strain-induced piezoelectric field and the valence band structures of the InGaN/GaN heterostructures affect the hole generation in the superlattices. The weak temperature dependence of the resistivities for the InGaN/GaN superlattices With higher In mole fractions indicates highly efficient hole generation in the superlattice.

本文言語English
ページ(範囲)T5111-T5116
ジャーナルMaterials Research Society Symposium - Proceedings
622
DOI
出版ステータスPublished - 2000 1月 1
外部発表はい
イベントWide-Bandgap Electronic Devices - San Francisco, CA, United States
継続期間: 2000 4月 242000 4月 27

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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