High-speed (10Gbit/s) and low-drive-voltage (1 v peak to peak) InGaAs/InGaAsP MOW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure

M. Aoki; M. Suzuki; M. Takahashi; H. Sano; T. Ido; T. Kawano; A. Takai

doi:10.1049/el:19920730

High-speed (10Gbit/s) and low-drive-voltage (1 v peak to peak) InGaAs/InGaAsP MOW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure

M. Aoki^*, M. Suzuki, M. Takahashi, H. Sano, T. Ido, T. Kawano, A. Takai

^*この研究の対応する著者

研究成果: Article › 査読

55 被引用数 (Scopus)

抄録

An MQW electroabsorption-modulator integrated DFB laser fabricated by using the in-plane bandgap energy control technique and a low-capacitance semi-insulating BH process is presented. This device has a threshold current as low as 5·4 mA and a modulation efficiency as high as 13dB/2V. Modulation at 10 Gbit/s with a modulation voltage of only 1 V peak to peak demonstrates the potential value of this device for electroabsorption modulation at 1·55 µm.

本文言語	English
ページ（範囲）	1157-1158
ページ数	2
ジャーナル	Electronics Letters
巻	28
号	12
DOI	https://doi.org/10.1049/el:19920730
出版ステータス	Published - 1992 6月 4
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

文献へのアクセス

10.1049/el:19920730

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引用スタイル

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abstract = "An MQW electroabsorption-modulator integrated DFB laser fabricated by using the in-plane bandgap energy control technique and a low-capacitance semi-insulating BH process is presented. This device has a threshold current as low as 5·4 mA and a modulation efficiency as high as 13dB/2V. Modulation at 10 Gbit/s with a modulation voltage of only 1 V peak to peak demonstrates the potential value of this device for electroabsorption modulation at 1·55 µm.",

keywords = "Integrated optics, Lasers, Optical modulation",

author = "M. Aoki and M. Suzuki and M. Takahashi and H. Sano and T. Ido and T. Kawano and A. Takai",

year = "1992",

month = jun,

day = "4",

doi = "10.1049/el:19920730",

language = "English",

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T1 - High-speed (10Gbit/s) and low-drive-voltage (1 v peak to peak) InGaAs/InGaAsP MOW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure

AU - Aoki, M.

AU - Suzuki, M.

AU - Takahashi, M.

AU - Sano, H.

AU - Ido, T.

AU - Kawano, T.

AU - Takai, A.

PY - 1992/6/4

Y1 - 1992/6/4

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AB - An MQW electroabsorption-modulator integrated DFB laser fabricated by using the in-plane bandgap energy control technique and a low-capacitance semi-insulating BH process is presented. This device has a threshold current as low as 5·4 mA and a modulation efficiency as high as 13dB/2V. Modulation at 10 Gbit/s with a modulation voltage of only 1 V peak to peak demonstrates the potential value of this device for electroabsorption modulation at 1·55 µm.

KW - Integrated optics

KW - Lasers

KW - Optical modulation

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