High-speed and low-drive-voltage MQW EA-modulator integrated DFB laser with semi-insulating BH structure

M. Aoki, M. Suzuki, M. Takahashi, H. Sano, T. Ido, T. Kawano, A. Takai

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

EA-modulator integrated DFB lasers have become one of the keydevices in multigigabit long-distance lightwave communications. [1, 2] Recently, a new method of integrating photonic devices has been proposed, using the in-plane local bandgap energy control of the MQW structures during simultaneous selective area growth (SAG) by MOCVD. [3, 4] This technique offers a high optical coupling efficiency as well as reproducible fabrication, which are essential in such optical integrated devices. This paper describes an MQW EA-modulator integrated with a DFB lase::, fabricated by SAG and a semi-insulating BH process, aimed at a high on/off ratio and high-speed operation.

本文言語English
ホスト出版物のタイトルConference Digest - 13th IEEE International Semiconductor Laser Conference
出版社Institute of Electrical and Electronics Engineers Inc.
ページ166-167
ページ数2
ISBN(電子版)4930813514
DOI
出版ステータスPublished - 1992 1 1
外部発表はい
イベント13th IEEE International Semiconductor Laser Conference, ISLC 1992 - Takamatsu, Kagawa, Japan
継続期間: 1992 9 211992 9 25

出版物シリーズ

名前Conference Digest - IEEE International Semiconductor Laser Conference
1992-September
ISSN(印刷版)0899-9406

Conference

Conference13th IEEE International Semiconductor Laser Conference, ISLC 1992
CountryJapan
CityTakamatsu, Kagawa
Period92/9/2192/9/25

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

フィンガープリント 「High-speed and low-drive-voltage MQW EA-modulator integrated DFB laser with semi-insulating BH structure」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル