High-speed optical switching of InAlGaAs/InAlAs multi-mode interference photonic switch with partial index-modulation region (MIPS-P)

S. Kumai, T. Ishikawa, A. Okazaki, Yamaguchi Hiroshi, Katsuyuki Utaka, H. Amanai, K. Kurihara, K. Shimoyama

    研究成果: Article

    18 引用 (Scopus)

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    photonic networks require high-speed switching in nano-second order switching time, low power consumption and low crosstalk, etc. For these purposes we proposed a semiconductor multi-mode interference photonic switch with partial index-modulation regions (MIPS-P) which can operate by current injection for refractive index change and is expected as a high-speed optical switch. In this letter we have experimentally confirmed small-current and low-crosstalk operation by using InAlGaAs/InAlAs, which is effective for injected carrier confinement. And also high-speed switching operation in a switching time of about 1.5 ns has been demonstrated, for the first time, at a repetition rate of 10 MHz.

    元の言語English
    ページ(範囲)578-582
    ページ数5
    ジャーナルIEICE Electronics Express
    2
    発行部数23
    DOI
    出版物ステータスPublished - 2005

      フィンガープリント

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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