High-speed parallel sensing architecture for multi-megabit flash E2PROM's

Kazuo Kobayashi, Takeshi Nakayama, Yoshikazu Miyawaki, Masanori Hayashikoshi, Yasushi Terada, Tsutomu Yoshihara

研究成果: Article

5 引用 (Scopus)

抄録

A high-speed parallel sensing architecture for high-density 5-V-only flash E2PROMs is described. A source-biasing technique enhances the cell current while minimizing the read disturbance problem. Flip-flop-type differential sense amplifiers are arranged between every two pairs of bit lines, so that half the memory cells on the same work line are sensed simultaneously. Self-time dynamic sensing was developed for high speed and stable sensing and also decreased read disturbance and operating current. Simulated results show that a sub-10-μA cell current is successfully sensed in 40 ns. In the program mode, the differential amplifier acts as a column latch, which substantially reduces the chip size.

元の言語English
ページ（範囲）79-83
ページ数5
ジャーナルIEEE Journal of Solid-State Circuits
巻25
発行部数1
DOI
出版物ステータスPublished - 1990 2
外部発表Yes

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Flip flop circuits
Differential amplifiers
Data storage equipment

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Kobayashi, K., Nakayama, T., Miyawaki, Y., Hayashikoshi, M., Terada, Y., & Yoshihara, T. (1990). High-speed parallel sensing architecture for multi-megabit flash E2PROM's. IEEE Journal of Solid-State Circuits, 25(1), 79-83. https://doi.org/10.1109/4.50288

High-speed parallel sensing architecture for multi-megabit flash E2PROM's. / Kobayashi, Kazuo; Nakayama, Takeshi; Miyawaki, Yoshikazu; Hayashikoshi, Masanori; Terada, Yasushi; Yoshihara, Tsutomu.

：: IEEE Journal of Solid-State Circuits, 巻 25, 番号 1, 02.1990, p. 79-83.

研究成果: Article

Kobayashi, K, Nakayama, T, Miyawaki, Y, Hayashikoshi, M, Terada, Y & Yoshihara, T 1990, 'High-speed parallel sensing architecture for multi-megabit flash E2PROM's', IEEE Journal of Solid-State Circuits, 巻. 25, 番号 1, pp. 79-83. https://doi.org/10.1109/4.50288
Kobayashi K, Nakayama T, Miyawaki Y, Hayashikoshi M, Terada Y, Yoshihara T. High-speed parallel sensing architecture for multi-megabit flash E2PROM's. IEEE Journal of Solid-State Circuits. 1990 2;25(1):79-83. https://doi.org/10.1109/4.50288
Kobayashi, Kazuo ; Nakayama, Takeshi ; Miyawaki, Yoshikazu ; Hayashikoshi, Masanori ; Terada, Yasushi ; Yoshihara, Tsutomu. / High-speed parallel sensing architecture for multi-megabit flash E2PROM's. ：: IEEE Journal of Solid-State Circuits. 1990 ; 巻 25, 番号 1. pp. 79-83.
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