抄録
The optical response time of an InGaAs/InP heterostructure avalanche photodiode (HAPD) with InGaAsP buffer layers is reported. It is shown that the buffer layers play an important role in reduction of the pile-up effect and are considered to be effective in achieving high-speed InGaAs/InP HAPDs.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 945-946 |
| ページ数 | 2 |
| ジャーナル | Electronics Letters |
| 巻 | 18 |
| 号 | 22 |
| DOI | |
| 出版ステータス | Published - 1982 10 28 |
| 外部発表 | はい |
ASJC Scopus subject areas
- Electrical and Electronic Engineering