High-speed-response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers

Y. Matsushima; S. Akiba; K. Sakai; Y. Kushiro; Y. Noda; K. Utaka

doi:10.1049/el:19820649

High-speed-response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers

Y. Matsushima, S. Akiba, K. Sakai, Y. Kushiro, Y. Noda, K. Utaka

研究成果: Article › 査読

60 被引用数 (Scopus)

抄録

The optical response time of an InGaAs/InP heterostructure avalanche photodiode (HAPD) with InGaAsP buffer layers is reported. It is shown that the buffer layers play an important role in reduction of the pile-up effect and are considered to be effective in achieving high-speed InGaAs/InP HAPDs.

本文言語	English
ページ（範囲）	945-946
ページ数	2
ジャーナル	Electronics Letters
巻	18
号	22
DOI	https://doi.org/10.1049/el:19820649
出版ステータス	Published - 1982 10月 28
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

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10.1049/el:19820649

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@article{2e1c186180cf412bbbe934494f8eba9a,

title = "High-speed-response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers",

abstract = "The optical response time of an InGaAs/InP heterostructure avalanche photodiode (HAPD) with InGaAsP buffer layers is reported. It is shown that the buffer layers play an important role in reduction of the pile-up effect and are considered to be effective in achieving high-speed InGaAs/InP HAPDs.",

keywords = "Photodiodes, Semiconductor devices and materials",

author = "Y. Matsushima and S. Akiba and K. Sakai and Y. Kushiro and Y. Noda and K. Utaka",

year = "1982",

month = oct,

day = "28",

doi = "10.1049/el:19820649",

language = "English",

volume = "18",

pages = "945--946",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "22",

}

TY - JOUR

T1 - High-speed-response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers

AU - Matsushima, Y.

AU - Akiba, S.

AU - Sakai, K.

AU - Kushiro, Y.

AU - Noda, Y.

AU - Utaka, K.

PY - 1982/10/28

Y1 - 1982/10/28

N2 - The optical response time of an InGaAs/InP heterostructure avalanche photodiode (HAPD) with InGaAsP buffer layers is reported. It is shown that the buffer layers play an important role in reduction of the pile-up effect and are considered to be effective in achieving high-speed InGaAs/InP HAPDs.

AB - The optical response time of an InGaAs/InP heterostructure avalanche photodiode (HAPD) with InGaAsP buffer layers is reported. It is shown that the buffer layers play an important role in reduction of the pile-up effect and are considered to be effective in achieving high-speed InGaAs/InP HAPDs.

KW - Photodiodes

KW - Semiconductor devices and materials

UR - http://www.scopus.com/inward/record.url?scp=0020191304&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020191304&partnerID=8YFLogxK

U2 - 10.1049/el:19820649

DO - 10.1049/el:19820649

M3 - Article

AN - SCOPUS:0020191304

VL - 18

SP - 945

EP - 946

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 22

ER -

High-speed-response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers

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