抄録
THE OPTICAL RESPONSE TIME OF AN INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTODIODE (HAPD) WITH INGAASP BUFFER LAYERS IS REPORTED. IT IS SHOWN THAT THE BUFFER LAYERS PLAY AN IMPORTANTROLE IN REDUCTION OF THE PILE-UP EFFECT AND ARE CONSIDERED TO BE EFFECTIVE IN ACHIEVING HIGH-SPEED INGAAS/INP HAPDS.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 945-946 |
| ページ数 | 2 |
| ジャーナル | ELECTRON LETT |
| 巻 | V 18 |
| 発行部数 | N 22 |
| 出版物ステータス | Published - 1982 1 1 |
| 外部発表 | Yes |
Fingerprint
ASJC Scopus subject areas
- Electrical and Electronic Engineering
これを引用
HIGH-SPEED-RESPONSE INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH INGAASP BUFFER LAYERS. / Matsushima, Yuichi; AKIBA, S.; SAKAI, K.; KUSHIRO, Y.; NODA, Y.; Utaka, Katsuyuki.
：: ELECTRON LETT, 巻 V 18, 番号 N 22, 01.01.1982, p. 945-946.研究成果: Article
}
TY - JOUR
T1 - HIGH-SPEED-RESPONSE INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTODIODE WITH INGAASP BUFFER LAYERS.
AU - Matsushima, Yuichi
AU - AKIBA, S.
AU - SAKAI, K.
AU - KUSHIRO, Y.
AU - NODA, Y.
AU - Utaka, Katsuyuki
PY - 1982/1/1
Y1 - 1982/1/1
N2 - THE OPTICAL RESPONSE TIME OF AN INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTODIODE (HAPD) WITH INGAASP BUFFER LAYERS IS REPORTED. IT IS SHOWN THAT THE BUFFER LAYERS PLAY AN IMPORTANTROLE IN REDUCTION OF THE PILE-UP EFFECT AND ARE CONSIDERED TO BE EFFECTIVE IN ACHIEVING HIGH-SPEED INGAAS/INP HAPDS.
AB - THE OPTICAL RESPONSE TIME OF AN INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTODIODE (HAPD) WITH INGAASP BUFFER LAYERS IS REPORTED. IT IS SHOWN THAT THE BUFFER LAYERS PLAY AN IMPORTANTROLE IN REDUCTION OF THE PILE-UP EFFECT AND ARE CONSIDERED TO BE EFFECTIVE IN ACHIEVING HIGH-SPEED INGAAS/INP HAPDS.
UR - http://www.scopus.com/inward/record.url?scp=0020191304&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0020191304&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0020191304
VL - V 18
SP - 945
EP - 946
JO - Electronics Letters
JF - Electronics Letters
SN - 0013-5194
IS - N 22
ER -