抄録
The optical response time of an InGaAs/InP heterostructure avalanche photodiode (HAPD) with InGaAsP buffer layers is reported. It is shown that the buffer layers play an important role in reduction of the pile-up effect and are considered to be effective in achieving high-speed InGaAs/InP HAPDs.
本文言語 | English |
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ページ(範囲) | 945-946 |
ページ数 | 2 |
ジャーナル | Electronics Letters |
巻 | 18 |
号 | 22 |
DOI | |
出版ステータス | Published - 1982 10 28 |
外部発表 | はい |
ASJC Scopus subject areas
- Electrical and Electronic Engineering