High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes

K. Ueda*, K. Kawamoto, H. Asano

*この研究の対応する著者

研究成果: Article査読

27 被引用数 (Scopus)

抄録

High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes were investigated. Cu Schottky diodes showed clear rectification up to ∼ 700 °C. The current-voltage characteristics of the diodes at 400 °C were almost unchanged after keeping them for 30 h, implying they have high stability at ∼ 400 °C. The diodes showed specific on-resistance and breakdown voltage of 83.4 mΩ cm2 and 713 V at 400 °C, respectively, which are comparable to reported highest values for diamond Schottky diodes and close to the theoretical limit for 6H-SiC at several hundred °C. These results indicate that Cu/diamond Schottky diodes are promising for high-temperature power applications.

本文言語English
論文番号6380
ページ(範囲)28-31
ページ数4
ジャーナルDiamond and Related Materials
57
DOI
出版ステータスPublished - 2015 8月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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