High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes were investigated. Cu Schottky diodes showed clear rectification up to ∼ 700 °C. The current-voltage characteristics of the diodes at 400 °C were almost unchanged after keeping them for 30 h, implying they have high stability at ∼ 400 °C. The diodes showed specific on-resistance and breakdown voltage of 83.4 mΩ cm2 and 713 V at 400 °C, respectively, which are comparable to reported highest values for diamond Schottky diodes and close to the theoretical limit for 6H-SiC at several hundred °C. These results indicate that Cu/diamond Schottky diodes are promising for high-temperature power applications.
ASJC Scopus subject areas
- 化学 (全般)